ECP050D

ECP050D WJCI | Alldatasheet

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Technical content

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 1 of 5 April 2006 ECP050D ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM Product Features x 1800 – 2300 MHz x +28.5 dBm P1dB x +44 dBm Output IP3 x 14 dB Gain @ 1960 MHz x +5V Single Positive Supply x 16-pin 4x4mm lead-free/green/ RoHS-compliant QFN Package

Applications

x Final stage amplifiers for Repeaters x Mobile Infrastructure Product Description The ECP050D is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1dB power. It is housed in an industry standard in a lead-free/ green/RoHS-compliant 16-pin 4x4mm QFN surface- mount package. All devices are 100% RF and DC tested. The ECP050D is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the ECP050D to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Functional Diagram Function Pin No. Vref 1 RF Input 3 RF Output 10, 11 Vbias 16 GND Backside Paddle N/C or GND 2, 4-9, 12-15 Specifications (1) Parameters Units Min Typ Max Operational Bandwidth MHz 1800 2300 Test Frequency MHz 2140 Gain dB 12.5 14.4 Input Return Loss dB 23 Output Return Loss dB 8 Output P1dB dBm +26.5 +28.5 Output IP3 (2) dBm +41 +42 IS-95A Channel Power @ -45 dBc ACPR, 1960 MHz dBm +22.5 wCDMA Channel Power @ -45 dBc ACLR, 2140 MHz dBm +20 Noise Figure dB 5.3 Operating Current Range (3) mA 200 250 300 Device Voltage V +5 1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB. Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 qC Storage Temperature -65 to +150 qC RF Input Power (continuous) +22 dBm Device Voltage +8 V Device Current 400 mA Device Power 2 W Junction Temperature +250 qC Operation of this device above any of these parameters may cause permanent damage. Typical Performance (4) Parameters Units Typical Frequency MHz 1960 2140 Gain dB 14.3 14.4 S11 dB -12 -23 S22 dB -8 -8 Output P1dB dBm +28.3 +28.5 Output IP3 (2) dBm +44 +42 IS-95A Channel Power @ -45 dBc ACPR, dBm +22.5 wCDMA Channel Power @ -45 dBc ACLR dBm +20 Noise Figure dB 5 5.3 Supply Bias +5 V @ 250 mA 4. Typical parameters reflect performance in a tuned application circuit at +25

Ordering Information

Part No. Description ECP050D-G ½ Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package) ECP050D-PCB1960 1960 MHz Evaluation Board ECP050D-PCB2140 2140 MHz Evaluation Board 14 13 7 8 N/C RF OUT RF OUT N/C Vref N/C RF IN N/C Vbias N/C N/C N/C N/C N/C N/C N/C

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 2 of 5 April 2006 ECP050D ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM Typical Device Data S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system) 50 550 1050 1550 2050 2500 Frequency (MHz) Gain / Maximum Stable Gain Gain (dB) DB(|S(2,1)|) DB(GMax()) 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Swp Max 4000MHz Swp Min 50MHz 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Swp Max 4000MHz Swp Min 50MHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026” , spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8, C9 and C10. The markers and vias are spaced in .050” increments.

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 3 of 5 April 2006 ECP050D ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM

1960 MHz Application Circuit (ECP050D-PCB1960)

Typical RF Performance at 25 qC CAP ID=C6 C=10 pF CAP ID=C2 C=56 pF IND ID=L1 L=18 nH CAP ID=C3 C=56 pF TLINP ID=TL1 Z0=50 Ohm L=175 mil Eeff=3.16 Loss=0 F0=0 GHz RES ID=C11 R=0 Ohm RES ID=R3 R=51 Ohm CAP ID=C1 C=56 pF CAP ID=C8 C=0.8 pF TLINP ID=TL2 Z0= 50 Ohm L=250 mil Eeff=3.16 Loss= 0 F0= 0 GHz CAP ID=C9 C=2 pF CAP ID= C7 C=1000 pF CAP ID=C4 C=1e7 pF RES ID=R1 R=100 Ohm RES ID=R2 R= 22 Ohm CAP ID=C5 C=1000 pF 5 6 7 8 13141516 SUBCKT ID=ECP50D NET="QFN" PORT P=1 Z=50 Ohm PORT P=2 Z=50 Ohm Vsupply = +5V size 1008 The transmission line lengths are from the edge of the device pins to the center of the component. All passive components are size 0603 unless otherwise noted. C8 should be placed at silk screen marker "D"on the WJ evaluation board. C9 should be placed between silk screen markers "4" and "5" on WJ evaluation board. +5.6V Zener S21 vs. Frequency 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) S21 (dB) +25°C +85°C -40°C S11 vs. Freqency -25 -20 -15 -10 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) S11 (dB) +25°C 85°C -40°C S22 vs. Frequency -25 -20 -15 -10 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) S22 (dB) +25°C +85°C -40°C Noise Figure vs. Frequency 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) NF (dB) +25°C +85°C -40°C P1 dB vs. Frequency 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) P1 dB (dBm) +25°C +85°C -40°C ACPR vs. Channel Power IS-95, 9 ch,Fwd, ±885 KHz offset, 30 KHz Meas BW, 1960 MHz -70 -65 -60 -55 -50 -45 -40 15 16 17 18 19 20 21 22 23 24 Output Channel Power (dBm) ACPR (dBc) +25°C +85°C -40°C OIP3 vs. Output Power freq=1960, 1961 MHz,+ 25°C 8 10 12 14 16 18 20 Output Power (dBm) OIP3 (dBm) OIP3 vs. Frequency +25°C, +11 dBm / tone 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) OIP3 (dBm) OIP3 vs. Temperature freq=1960,1961 MHz, +11 dBm / tone -40 -15 10 35 60 85 Temperature (°C) OIP3 (dBm) Frequency 1960 MHz S21 ± Gain 14.3 dB S11 ± Input Return Loss -12 dB S22 ± Output Return Loss -8 dB Output P1dB +28.3 dBm Output IP3 (+11 dBm / tone, 1 MHz spacing) +44 dBm Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) +22.5 dBm Noise Figure 5 dB Device / Supply Voltage +5 V Quiescent Current 250 mA

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 4 of 5 April 2006 ECP050D ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM

2140 MHz Application Circuit (ECP050D-PCB2140)

Typical RF Performance at 25 qC CAP ID=C1 C=56 pF CAP ID= C2 C=56 pF CAP ID=C3 C=56 pF CAP ID=C4 C=1e7 pF CAP ID=C6 C=10 pF CAP ID= C7 C=1000 pF CAP ID=C8 C=0.8 pF IND ID=L1 L=18 nHRES ID=C11 R=0 Ohm CAP ID=C9 C= 1.8 pF RES ID=R1 R=100 Ohm CAP ID=C5 C=1000 pF RES ID= R2 R=22 Ohm RES ID=R3 R=51 Ohm TLINP ID=TL1 Z0=50 Ohm L=275 mil Eeff=3.16 Loss=0 F0=0 GHz TLINP ID=TL2 Z0= 50 Ohm L=225 mil Eeff=3.16 Loss= 0 F0= 0 GHz 5 6 7 8 13141516 SUBCKT I D=ECP50D NET="QFN" PORT P=1 Z=50 Ohm PORT P=2 Z=50 Ohm All passive components are size 0603 unless otherwise noted. C8 should be placed at silk screen marker "F"on the WJ evaluation board as shown. C9 should be placed at silk screen markers "4" on WJ evaluation board as shown. +5.6V Zener Vsupply = +5V size 1008 The transmission line lengths are from the edge of the device pins to the center of the component. S21 vs. Frequency 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) S21 (dB) +25°C +85°C -40°C S11 vs. Frequency -25 -20 -15 -10 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) S11 (dB) +25°C +85°C -40°C S22 vs. Frequency -25 -20 -15 -10 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) S22 (dB) +25°C +85°C -40°C Noise Figure vs. Frequency 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) NF (dB) + 25°C +85°C -40°C ACPR vs. Channel Power 3GPP W-CDMA Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz -65 -60 -55 -50 -45 -40 -35 15 16 17 18 19 20 21 Output Channel Power (dBm) ACPR (dBc) +25°C +85°C -40°C P1 dB vs. Frequency 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) P1 dB (dBm) +25°C +85°C -40°C OIP3 vs. Frequency +25°C, +11 dBm / tone 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) OIP3 (dBm) OIP3 vs. Temperature freq. = 2140, 2141, +11 dBm / tone -40 -15 10 35 60 85 Temperature ( °C) OIP3 (dBm) OIP3 vs. Output Power freq. = 2140, 2141 MHz, 25°C 6 8 10 12 14 16 18 20 Output Power (dBm) OIP3 (dBm) Frequency 2140 MHz S21 ± Gain 14.4 dB S11 ± Input Return Loss -23 dB S22 ± Output Return Loss -8 dB Output P1dB +28.5 dBm Output IP3 (+11 dBm / tone, 1 MHz spacing) +42 dBm W-CDMA Channel Power (@-45 dBc ACLR) +20 dBm Noise Figure 5.3 dB Device / Supply Voltage +5 V Quiescent Current 250 mA

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 5 of 5 April 2006 ECP050D ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM ECP050D-G Mechanical Information This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85 qC Thermal Resistance, Rth (1) 62 qC / W Junction Temperature, Tj (2) 162 qC Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 10 and 11 and the current applied to pins 10, 11, and 16 and can be calculated by: Tj = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 Product Marking The component will be marked with an “ E050G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “ E050” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “ Application Notes” section. ESD / MSL Information ESD Rating: Class 1B Value: Passes between 500 and 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 1 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135º ) diameter drill and have a final plated thru diameter of .25 mm (.010º ). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100 1000 10000 100000 1000000 50 60 70 80 90 100 Tab Temperature (° C ) MTTF (million hrs)