ECG015B-G

ECG015 WJCI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 5 October 2006 ECG015 ¼ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM Product Features 1800 – 2500 MHz

• +24 dBm P1dB
• +41 dBm OIP3
• 15 dB Gain
• 5 dB Noise Figure
• Single Positive Supply (+8V)
• Lead-free/Green/RoHS - compliant SOT-89 Package

Applications

• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless Product Description The ECG015 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve performance over a broad range with +41 dBm OIP3 and +24 dBm of compressed 1dB power and is housed in a lead-free/green/RoHS-compliant SOT-89 S MT package. All devices are 100% RF and DC tested. The product is targeted for use as a gain block/dri ver amplifier for various current and next generation w ireless technologies such as CDMA, DCS1800 and CDMA2000, where high linearity and medium power is required. In addition, the ECG015 will work for numerous other applications within the 1800 to 2500 MHz frequency range. Functional Diagram RF IN GND RF OUT GND 1 2 3 Pin No. Function

1 Input

3 Output/Bias

2, 4 Ground Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz 1800 2500 Test Frequency MHz 2140 Gain dB 13.5 15 Input Return Loss dB 20 Output Return Loss dB 10 Output P1dB dBm +22 +24 Output IP3 (2) dBm +37.5 +41 Noise Figure dB 5 Device Voltage V 5 Device Current mA 85 100 135 1. Test conditions unless otherwise noted: 25 °C, Vsupply = +8 V, in tuned application circuit with Rbias = 30 Ω . 2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +150 °C Device Current 180 mA RF Input Power (continuous) +15 dBm Junction Temperature +250 °C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (3) Parameter Units Typical Frequency MHz 1900 2140 2450 S21 dB 16.5 15 14.5 S11 dB -9 -20 -12 S22 dB -9.5 -10 -9 Output P1dB dBm +24 +24 +23 Output IP3 (2) dBm +41 +41 +42 Noise Figure dB 5 5 5 3. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, I cc = 100 mA, +25 °C, Rbias = 30 Ω .

Ordering Information

Part No. Description ECG015B-G 0.2 Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOT-89 package) ECG015B-PCB1960 1960 MHz Fully Assembled Eval. Board ECG015B-PCB2140 2140 MHz Fully Assembled Eval. Board

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 5 October 2006 ECG015 ¼ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM Typical Device Data S-parameters (V device = +5V, I cc = 100 mA, 25 °C, unmatched 50 ohm system) Frequency (GHz) Gain / Maximum Stable Gain Gain (dB) DB(|S[2,1]|) DB(GMax) 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Swp Max 2.50123GHz Swp Min 1.79083GHz 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Swp Max 2.50123GHz Swp Min 1.79083GHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a pa rticular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 1800 – 2500 MHz, with markers placed at 1.8 – 2.5 GHz in 0.05 GHz increments. S-Parameters (V device = +5 V, I cc = 100 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Micr ostrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’ , ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors. The markers and vias are spaced in .050” increme nts.

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 5 October 2006 ECG015 ¼ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM

1960 MHz Application Circuit (ECG015B-PCB1960)

Typical RF Performance at 25 °° °°C ∗ Please see note 2 on page 1. IND ID=L3 L=3.3 nH RES ID=R3 R=220 Ohm CAP ID=C4 C=56 pF CAP ID=C5 C=56 pF CAP ID=C1 C=56 pF IND ID=L2 L=15 nH RES ID=R1 R=30 Ohm IND ID=L1 L=15 nH CAP ID=C2 C=1000 pF CAP CAP ID=C6 C=56 pF RES ID=R4 R=22 Ohm DIODE1 ID=D1 CAP ID=C8 C=1.2 pF CAP ID=C7 C=1.2 pF RES ID=R2 R=390 Ohm SUBCKT NET="ECG015" PORT P=2 Z=50 Ohm PORT P=1 Z=50 Ohm +8 V ID=C3 C=.1uF a system using a DC regulator. boards. It is not specifically required in the fin al circuit layout in The diode D1 is used as over-voltage protection on the evaluation 8.2 v Ssg, O IP3 & P1dB vs. Tem perature @ 1.96G H z -40 -15 10 35 60 85 Tem perature (° C ) Gain P1dB OIP3 (dBm) G ain P1dB O IP3 A C P R 1 vs. Pout vs. Tem perature at 1.96G H z -70 -65 -60 -55 -50 -45 -40 11 13 15 17 Pout (dB m ) dBc 85° C -40° C 25° C

2140 MHz Application Circuit (ECG015B-PCB2140)

Typical RF Performance at 25 °° °°C ∗ Please see note 2 on page 1. IND ID=L3 L=3.3 nH RES ID=R3 R=220 Ohm CAP ID=C4 C=56 pF CAP ID=C5 C=56 pF CAP ID=C1 C=56 pF IND ID=L2 L=15 nH RES ID=R1 R=30 Ohm IND ID=L1 L=15 nH CAP ID=C2 C=1000 pF CAP CAP ID=C6 C=56 pF RES ID=R4 R=22 Ohm DIODE1 ID=D1 CAP ID=C8 C=1 pF CAP ID=C7 C=.7 pF RES ID=R2 R=390 Ohm SUBCKT NET="ECG015" PORT P=2 Z=50 Ohm PORT P=1 Z=50 Ohm +8 V ID=C3 C=.1uF a system using a DC regulator. boards. It is not specifically required in the fin al circuit layout in The diode D1 is used as over-voltage protection on the evaluation 8.2 v Ssg, OIP3, & P1dB vs. Temperature @ 2.14GHz -40 -15 10 35 60 85 Temperature (° C) Ssg & P1dB OIP3 (dBm) Ssg P1dB OIP3 Frequency 1960 MHz Gain 16.5 dB Input Return Loss 9 dB Output Return Loss 9.5 dB Output P1dB +24 dBm Output IP3 ∗ (+9 dBm / tone, 1 MHz spacing) +41 dBm Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) +17 dBm Noise Figure 5 dB Device Voltage +5 V Quiescent Current 100 mA Frequency 2140 MHz Gain 15 dB Input Return Loss 20 dB Output Return Loss 10 dB Output P1dB +24 dBm Output IP3 ∗ (+9 dBm / tone, 1 MHz spacing) +41 dBm Noise Figure 5 dB Device Voltage +5 V Quiescent Current 100 mA C7 placed at silkscreen marker ‘A” or center of component placed at 4.4 deg. @ 2.14 GHz away from pin 1. C8 is placed at silkscreen marker ‘7” or center of component placed at 37 deg. @ 2.14 GHz away from pin 3. C8 is placed at silkscreen marker ‘7” or center of component placed at 32 deg. @ 1.9 GHz away from pin 3. C7 placed at silkscreen marker ‘A” or center of componen t placed at 3.9 deg. @ 1900 MHz away from pin 1.

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 5 October 2006 ECG015 ¼ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM

2450 MHz Reference Design

Typical RF Performance at 25 °° °°C ∗ Please see note 2 on page 1. RES ID=R3 R=220 Ohm CAP ID=C4 C=56 pF CAP ID=C5 C=56 pF CAP ID=C1 C=56 pF IND ID=L2 L=15 nH RES ID=R1 R=30 Ohm IND ID=L1 L=15 nH CAP ID=C2 C=1000 pF CAP CAP ID=C6 C=56 pF RES ID=R4 R=22 Ohm DIODE1 ID=D1 CAP ID=C8 C=1 pF RES ID=L3 R=0 Ohm RES ID=R2 R=390 Ohm SUBCKT NET="ECG015" PORT P=2 Z=50 Ohm PORT P=1 Z=50 Ohm +8 V ID=C3 C=.1uF a system using a DC regulator. boards. It is not specifically required in the fin al circuit layout in The diode D1 is used as over-voltage protection on the evaluation 8.2 v C8 placed half way between silkscreen marker ‘3’ and ‘4’ or center of component placed at 23 deg. @ 2.45 GHz away from pin 3. Ssg, OIP3 and P1dB vs. Temperature at 2.45GHz -40 -15 10 35 60 85 Temperature (° C) Ssg & P1db OIP3 (dBm) Ssg P1dB OIP3 Frequency 2450 MHz Gain 14.5 dB Input Return Loss 12 dB Output Return Loss 9 dB Output P1dB +23 dBm Output IP3 ∗ (+9 dBm / tone, 1 MHz spacing) +42 dBm Noise Figure 5 dB Device Voltage +5 V Quiescent Current 100 mA

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 5 October 2006 ECG015 ¼ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM ECG015B Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85 °C Thermal Resistance, Rth (1) 128 °C / W Junction Temperature, Tj (2) 149 °C Notes: 1. The thermal resistance is referenced from the ju nction-to- case at a case temperature of 85 °C. Tj is a function of the voltage and the current applied to pin 3 and ca n be calculated by: Tj = Tcase + Rth * Vde * Icc 2. This corresponds to the typical biasing conditio n of +5V, 100 mA at an 85 ° C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 °C. Product Marking The component will be marked with an “E015G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “E015” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Class 1B Value: Passes at between 500 and 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100 1000 10000 100000 60 70 80 90 100 110 120 Tab Temperature (° C)