ECG006C_15 TRIQUINT | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 4 February 2009 ECG006C InGaP HBT Gain Block Product Features DC – 5.5 GHz

  • 15 dB Gain @ 1 GHz
  • +15.5 dBm P1dB @ 1 GHz
  • +32 dBm OIP3 @ 1 GHz
  • 3.7 dB Noise Figure
  • Internally matched to 50 Ω
  • Robust 1000V ESD, Class 1C
  • Lead-free/RoHS-compliant SOT-

Applications

  • CATV / FTTX
  • WLAN / ISM
  • RFID
  • WiMAX / WiBro Product Description The ECG006C is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG006C typically provides 15 dB of gain, +32 dBm Output IP3, and +15.5 dBm P1dB. The ECG006C consists of a Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in lo w-cost, surface-mountable plastic lead-free/RoHS-compliant SOT- 86 packages. All devices are 100% RF and DC tested. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG006C will work for other various applications within the DC to 5.5 GHz frequency range such as CATV and mobile wireless. Functional Diagram RF Out RF In GND GND Function Pin No. Input 1 Output/Bias 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz DC 5500 Test Frequency MHz 1000 Gain dB 15 Output P1dB dBm +15.5 Output IP3 (2) dBm +32 Test Frequency MHz 2000 Gain dB 12.8 14.5 16.2 Input Return Loss dB 18 Output Return Loss dB 14 Output P1dB dBm +12 +15 Output IP3 (2) dBm +32 Noise Figure dB 4.0 Device Voltage V 3.5 3.9 4.3 Device Current mA 45 1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +5 V, Rbias = 24.3 Ω , 50 Ω System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Storage Temperature -55 to +150 °C Device Current 150 mA RF Input Power (continuous) +12 dBm Thermal Resistance 233 °C/W Junction Temperature +160 °C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (1) Parameter Units Typical Frequency MHz 500 900 1900 2140 S21 dB 15.2 15 14.5 14.4 S11 dB -14 -14 -17 -18 S22 dB -12 -12.5 -14 -14.5 Output P1dB dBm +15.8 +15.4 +15 +15 Output IP3 (2) dBm +32 +32 +30 +30 Noise Figure dB 3.7 3.7 3.7 3.7

Ordering Information

Part No. Description ECG006C-G InGaP HBT Gain Block (lead-free/RoHS-compliant SOT-86 package) ECG006C-PCB 700 – 2400 MHz Fully Assembled Eval. Board Standard tape / reel size = 1000 pieces on a 7” ree l.

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 4 February 2009 ECG006C InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 V, R bias = 24.3 ΩΩ ΩΩ , I cc = 45 mA Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S11 dB -14 -14 -14 -17 -18 -20 -17 -13 Output IP3 dBm +31 +31.5 +32 +30 +30 +29.6 1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24.3 Ω , Icc = 45 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. G a in v s. Frequ enc y 1 0 1 2 1 4 1 6 1 8 50 0 1 0 00 1 50 0 2 00 0 2 50 0 3 00 0 F re que ncy (M H z) Gain +2 5C -40 C +8 5C S 1 1, S 22 vs . F re que nc y -2 5 -2 0 -1 5 -1 0 0 1 2 3 4 5 6 F re que nc y (G H z) S11, S22 (dB) S 2 2 S 1 1 V de v s. Ic c V de (V ) Icc (mA) +25C O IP 3 v s. Fre que nc y 1 5 2 0 2 5 3 0 3 5 50 0 10 0 0 1 50 0 20 00 2 50 0 3 00 0 Frequ enc y (M H z) OIP3 (dBm) +25 ° C -4 0 ° C +8 5° C N oise Fig ure v s. Frequ enc y 2 .5 3 .5 5 0 0 10 0 0 1 5 00 2 00 0 Fre quenc y (M H z) NF (dB) P 1 dB vs . Fre que ncy 1 0 1 2 1 4 1 6 1 8 5 00 1 00 0 15 00 2 00 0 25 00 3 00 0 Freq uen cy (M H z) P1dB (dBm)

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 4 February 2009 ECG006C InGaP HBT Gain Block Recommended Application Circuit ECG006C-PCB Recommended Component Values Reference Frequency (MHz) Designator 50 500 900 1900 2200 2500 3500 L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. Value / Type Size L1 39 nH wirewound inductor 0603 C1, C2 56 pF chip capacitor 0603 C3 0.018 µ F chip capacitor 0603 C4 Do Not Place R4 24.3 Ω 1% tolerance 0805 Recommended Bias Resistor Values Supply Voltage R1 value Size 5 V 24.4 ohms 0805 6 V 46.7 ohms 0805

8 V 91 ohms 1210

9 V 113 ohms 1210

10 V 136 ohms 2010

12 V 180 ohms 2010

The proper value for R1 is dependent upon the suppl y voltage and allows for bias stability over temperat ure. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. Typical Device S-Parameters S-Parameters (V device = +3.9 V, I CC = 45 mA, T = 25 °C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download from the website at: http://www.TriQuint.com Blocking Capacitor RF OUT RF Choke 0.018 µF Bias Resistor RF IN Bypass Capacitor Blocking Capac itor Vcc Icc = 45 mA ECG006

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 4 February 2009 ECG006C InGaP HBT Gain Block Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Land Pattern Product Marking The component will be marked with a two-digit numeric lot code (shown as “XX”) followed with an “I” designator on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Class 1A Value: Passes between 250 and 500V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the prope r performance of this device. Vias should use a .35mm (#80 / .0135”) dia meter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fa sten the board to a heatsink. Ensure that the ground / thermal via reg ion contacts the heatsink. 4. Do not put solder mask on the backside of the P C board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Ang les are in degrees.