ECG005 WJCI | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 4 April 2007 ECG005 InGaP HBT Gain Block Product Features

  • DC – 4 GHz
  • +18 dBm P1dB at 1 GHz
  • +34 dBm OIP3 at 1 GHz
  • 22.1 dB Gain at 1 GHz
  • 3.3 dB Noise Figure at 2 GHz
  • Available in Lead-free / green
  • Internally matched to 50 Ω

Applications

  • CATV / FTTX
  • W-LAN / ISM
  • RFID
  • WiMAX / WiBro Product Description The ECG005B is a general-purpose buffer amplifier that offers high d ynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG005B typically provides 22.1 dB of gain, +34 dBm Output IP3, and +18 dBm P1dB. The ECG005B consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in a low- cost, surface-mountable lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG005B will work for other various applications within the DC to 4 GHz frequency range such as CATV and mobile wireless. Functional Diagram RF IN GND RF OUT GND 1 2 3 Function Pin No. Input 1 Output/Bias 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz DC 4000 Test Frequency MHz 1000 Gain dB 22.1 Output P1dB dBm +18 Output IP3 (2) dBm +34 Test Frequency MHz 2000 Gain dB 19.8 21.4 22.8 Input Return Loss dB 19 Output Return Loss dB 11 Output P1dB dBm +16.5 +17.5 Output IP3 (2) dBm +30 +32 Noise Figure dB 3.3 Device Voltage V 4.2 4.8 5.3 Device Current mA 65 1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +6 V, Rbias = 18 Ω , 50 Ω System. 2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +150 °C Device Current 130 mA RF Input Power (continuous) +12 dBm Junction Temperature +250 °C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (1) Parameter Units Typical Frequency MHz 500 900 1900 2140 S21 dB 22.4 22.2 21.5 21.3 S11 dB -28 -25 -20 -18 S22 dB -22 -18 -11 -10 Output P1dB dBm +17.8 +18 +17.5 +19.0 Output IP3 dBm +33 +34 +32 +30.5 Noise Figure dB 5.2 3.4 3.3 3.8

Ordering Information

Part No. Description ECG005B-G InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 package) ECG005B-PCB 700 – 2400 MHz Fully Assembled Eval. Board

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 4 April 2007 ECG005 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V, Rbias = 18 ΩΩ , Icc = 65 mA Frequency MHz 100 500 900 1900 2140 2400 3500 5800 Output IP3 dBm +33.6 +33.5 +34 +32 +31.5 +31 1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 18 Ω , Icc = 65 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of +4.5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Small Signal Gain 0.5 1 1.5 2 2.5 Frequency (GHz) Gain (dB) 25°C -40°C 85°C S11 & S22 25°C -30 -25 -20 -15 -10 0.5 1.5 2.5 Frequency (GHz) Return Loss (dB) S11 S22 Icc vs Vde 100 120 140 160 0 1 2 3 4 5 6 Vde (V) Icc (mA) 25°C OIP3 vs. Frequency 0.5 1 1.5 2 2.5 Frequency (GHz) OIP3 (dBm) 25°C -40°C 85°C Noise Figure vs. Frequency 0.5 1 1.5 2 Frequency (GHz) NF (dB) P1dB vs. Frequency 0.5 1 1.5 2 2.5 Frequency (GHz) P1dB (dBm) 25°C -40°C 85°C

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 4 April 2007 ECG005 InGaP HBT Gain Block Recommended Application Circuit Recommended Component Values Reference Frequency (MHz) Designator 50 500 900 1900 2200 2500 3500 L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. Value / Type Size L1 39 nH wirewound inductor 0603 C1, C2 56 pF chip capacitor 0603 C3 0.018 µ F chip capacitor 0603 C4 Do Not Place R4 18 Ω 1% tolerance 0805 Recommended Bias Resistor Values Supply Voltage R1 value Size 6 V 18.5 ohms 0805 7 V 33.8 ohms 1210

8 V 49 ohms 1210

9 V 65 ohms 2010

10 V 80 ohms 2010

12 V 111 ohms 2512

The proper value for R1 is dependent upon the supply voltage a nd allows for bias s tability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. Typical Device S-Parameters S-Parameters (Vdevice = +4.8 V, ICC = 65 mA, T = 25°C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download off of the website at: http://www.wj.com Blocking Capacitor RF OUT RF Choke 0.018 µF Bias Resistor RF IN Bypass Capacitor Blocking Capacitor Vcc Icc = 65 mA ECG005

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 4 April 2007 ECG005 InGaP HBT Gain Block ECG005B-G Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85 °C Thermal Resistance, Rth 128 °C/W Product Marking The component will be marked with an “ E005G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “ E005” designator followed b y an alphanumeric lot code; it may also h ave been marked with a “ F” designator followed by a 3-digit numeric lot code. Tape a nd reel specifications for this part are located o n the website in the “ Application Notes” section. MSL / ESD Rating ESD Rating: Class 1A Value: Passes between 250 and 500V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that t he ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.