ECG001B_15 TRIQUINT | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1I503I615I9000 • FAX: +1I503I615I8900 • eImail: infoIsales@tqs.com • Web site: www.TriQuint.com Page 1 of 5 August 2011 ECG001B InGaP HBT Gain Block Product Features

  • DC – 6 GHz
  • +12.5 dBm P1dB at 1 GHz
  • +25 dBm OIP3 at 1 GHz
  • 22 dB Gain at 1 GHz
  • 3.4 dB Noise Figure
  • Available in leadpfree / green SOTp89 pkg style
  • Internally matched to 50 Ω

Applications

  • Mobile Infrastructure
  • CATV / FTTX
  • WpLAN / ISM
  • RFID
  • WiMAX / WiBro Product Description The ECG001B is a generalppurpose buffer amplifier t hat offers high dynamic range in a lowpcost surfacepmou nt package. At 1000 MHz, the ECG001B typically provide s 22 dB of gain, +25 dBm Output IP3, and +12.5 dBm P1dB. The ECG001B consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technol ogy and only requires DCpblocking capacitors, a bias re sistor, and an inductive RF choke for operation. The devic e is ideal for wireless applications and is available in a lowp cost, surfacepmountable leadpfree/green/RoHSpcompli ant SOTp89 package. All devices are 100% RF and DC tested. The broadband MMIC amplifier can be directly applie d to various current and next generation wireless techno logies such as GPRS, GSM, CDMA, and WpCDMA. In addition, the ECG001B will work for other various application s within the DC to 6 GHz frequency range such as CATV and mobile wireless. Functional Diagram RF IN GND RF OUT GND 1 2 3 Function Pin No. Input 1 Output/Bias 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz DC 6000 Test Frequency MHz 1000 Gain dB 22.2 Output P1dB dBm +12.5 Output IP3 (2) dBm +25 Test Frequency MHz 2000 Gain dB 20.45 21.2 21.95 Input Return Loss dB 35 Output Return Loss dB 18 Output P1dB dBm +12.5 Output IP3 (2) dBm +23 +26 Noise Figure dB 3.4 4 Device Voltage V 3.0 3.4 3.8 Device Current mA 30 1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, Rbias = 51 Ω , 50 Ω System. 2. 3OIP measured with two tones at an output power of –1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Storage Temperature p55 to +150 °C Device Current 150 mA RF Input Power (continuous) +12 dBm Junction Temperature +160 Thermal Resistance 167 °C/W Operation of this device above any of these parameters may cause permanent damage. Typical Performance (1) Parameter Units Typical Frequency MHz 500 900 1900 2140 S21 dB 22.6 22.4 21.4 21.0 S11 dB p46 p42 p35 p29 S22 dB p29 p24 p18 p17 Output P1dB dBm +12 +12.5 +12.5 +12.5 Output IP3 (2) dBm +23 +25 +26 +26 Noise Figure dB 3.4 3.4 3.4 3.4

Ordering Information

Part No. Description ECG001BpG InGaP HBT Gain Block (leadpfree/green/RoHSpcompliant SOTp89 package) Standard T/R size = 1000 pieces on a 7” reel. Not Recommended For New Designs Recommended replacement parts: AG303-63G

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1I503I615I9000 • FAX: +1I503I615I8900 • eImail: infoIsales@tqs.com • Web site: www.TriQuint.com Page 2 of 5 August 2011 ECG001B InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 V, R bias = 51 ΩΩ ΩΩ , I cc = 30 mA Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S11 dB p48 p46 p42 p35 p29 p28 p22 p14 S22 dB p34 p29 p24 p18 p17 p16 p13 p8 1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.4 V, Rbias = 51 Ω , Icc = 30 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of p1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain 0 1 2 3 4 5 6 Frequency (GHz) G a in (d B ) Return Loss I40 I30 I20 I10 0 1 2 3 4 5 6 Frequency (GHz) S 1 1 , S 2 2 (d B ) S11 S22 Icc vs. Vde 100 Vde (V) Ic c (m A ) O IP 3 vs. F requ enc y 500 1000 1500 2000 2500 3000 F req uen cy (M H z) OIP3 (dBm) +25C I40C +85C Noise Figure vs. Frequency 500 1000 1500 2000 2500 3000 Frequency (MHz) N F (d B ) P 1dB vs. F requ enc y 500 1000 1500 2000 2500 3000 F requ enc y (M H z) P1dB (dBm) +25C I40C +85C

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1I503I615I9000 • FAX: +1I503I615I8900 • eImail: infoIsales@tqs.com • Web site: www.TriQuint.com Page 3 of 5 August 2011 ECG001B InGaP HBT Gain Block Recommended Application Circuit ECG001B-PCB Recommended Component Values Reference Frequency (MHz) Designator 50 500 900 1900 2200 2500 3500 L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. Value / Type Size L1 39 nH wirewound inductor 0603 C1, C2 56 pF chip capacitor 0603 C3 0.018 µF chip capacitor 0603 C4 Do Not Place R4 51 Ω 1% tolerance 0805 Recommended Bias Resistor Values Supply Voltage R1 value Size 5 V 53.3 ohms 0805 6 V 86.7 ohms 0805

8 V 153 ohms 1210

9 V 187 ohms 1210

10 V 220 ohms 2010

12 V 287 ohms 2010

The proper value for R1 is dependent upon the suppl y voltage and allows for bias stability over temperat ure. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. Blocking Capacitor RF OUT RF Choke 0.018 µF Bias Resistor RF IN Bypass Capacitor Blocking Capacitor Vcc Icc = 30 mA ECG001B

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1I503I615I9000 • FAX: +1I503I615I8900 • eImail: infoIsales@tqs.com • Web site: www.TriQuint.com Page 4 of 5 August 2011 ECG001B InGaP HBT Gain Block ECG001B-G Mechanical Information This package is leadpfree/Green/RoHSpcompliant. Th e plating material on the leads is NiPdAu. It is c ompatible with both leadpfree (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Land Pattern Product Marking The component will be marked with an “E001G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tinplead package is marked with an “E001” designator followed by an alphanumeric lot code; it may also have been marked with a “B” designator followed by a 3p digit numeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Class 1A Value: Passes between 250 and 500V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22pA114 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard JpSTDp020 Mounting Config. Notes 1. Ground / thermal vias are critical for the prope r performance of this device. Vias should use a .35mm (#80 / .0135”) dia meter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fa sten the board to a heatsink. Ensure that the ground / thermal via reg ion contacts the heatsink. 4. Do not put solder mask on the backside of the P C board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board materi al and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Ang les are in degrees. E001G

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1I503I615I9000 • FAX: +1I503I615I8900 • eImail: infoIsales@tqs.com • Web site: www.TriQuint.com Page 5 of 5 August 2011 ECG001B InGaP HBT Gain Block Typical Device S-Parameters SpParameters (V device = +3.4 V, I CC = 30 mA, T = 25 °C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device Spparameters are available for download off of the website at: http://www.triquint.com