EC772320W E-CMOS | Alldatasheet
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■ 20V,500mA, R DS(ON) =350m Ω@V GS = 4.5V ■ Worldwide Smallest Package : 1x0.6x0.45 mm ■ Fast switching ■ Green Device Available ■ Suit for 1.2V Gate Drive Applications ■ 2KV HBM ESD Capability Application ■ Notebook ■ Smartphone ■ Battery Protection ■ Hand-held Instruments Absolute Maximum Ratings Tc=25 ℃ unless otherwise noted Thermal Characteristics Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 8 V Drain Current – Continuous (T C =25 )℃ 500 mA ID Drain Current – Continuous (T C =100 ℃) 320 mA IDM Drain Current – Pulsed 1 1000 mA Power Dissipation (T C =25 )℃ 155 mW PD Power Dissipation – Derate above 25 ℃ 1.25 mW/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit R θJA Thermal Resistance Junction to ambient --- 800 /W ℃
EC772320W 20V N -Channel MOSFETs Electrical Characteristics TJ=25 ℃, unless otherwise noted Off Characteristics On Characteristics Dynamic and switching Characteristics Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width 300us , duty cycle 2%.≦ ≦ 3. Essentially independent of operating temperature. Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D =250uA 20 --- V △BV DSS /△TJ BV DSS Temperature Coefficient Reference to 25 ℃ , I D =1mA --- -0.01 --- V/ ℃ VDS =20V , V GS =0V , T J=25 ℃ --- --- 1 uA IDSS Drain-Source Leakage Current V DS =16V , V GS =0V , T J=125 ℃ --- --- 10 uA IGSS Gate-Source Leakage Current V GS =± 8V , V DS =0V --- --- ± 20 uA VGS =4.5V , I D =0.5A --- 200 350 m Ω VGS =2.5V , I D =0.4A --- 235 450 V VGS =1.5V , I D =0.1A --- 365 800 uA R DS(ON) Static Drain-Source On-Resistance VGS =1.2V , I D =0.1A --- 600 1500 uA VGS(th) Gate Threshold Voltage 0.3 0.5 0.8 V △VGS(th) V GS(th) Temperature Coefficient VGS =V DS , I D Qg Total Gate Charge 2 , 3 --- 1 2 Qgs Gate-Source Charge 2 , 3 --- 0.26 0.5 Qgd Gate-Drain Charge 2 , 3 VDS =10V , nC Td(on) Turn-On Delay Time 2 , 3 --- 5 10 Tr Rise Time 2 , 3 --- 3.5 7 Td(off) Turn-Off Delay Time 2 , 3 --- 14 28 Tf Fall Time 2 , 3 VDD =10V , V GS =4.5V , R G =10 ID =0.5A --- 6 12 ns Ciss Input Capacitance --- 38.2 75 Coss Output Capacitance --- 14.4 28 Crss Reverse Transfer Capacitance V DS =10V , V GS =0V , F=1MHz --- 6 12 pF IS Continuous Source Current --- --- 500 mA ISM Pulsed Source Current VG =V D =0V , Force Current --- --- 1000 mA VSD Diode Forward Voltage V GS =0V , I S=0.2A , T J=25 ℃ --- --- 1 V
EC772320W 20V N -Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Response Fig.6 Maximum Safe Operation Area
EC772320W 20V N -Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform