EC95810 E-CMOS | Alldatasheet

Document overview

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Technical content

Features

  • Ultra-Low Quiescent Current：1.2 µA (Typ.)
  • High Accuracy of Detection Voltage：±2%
  • Hysteresis Width 5% VDET (Typ.)
  • Detection Voltage：1.6V to 6.0V (0.1V Step)
  • Built-in Delay Circuit：200ms (Typ.)
  • Operating Voltage Range：1.0V to 6.0V
  • N-ch Open Drain and CMOS Output
  • SOT-23, SC-82 and SC-70 Packages
  • RoHS Compliant and 100% Lead (Pb)-Free and Green (Halogen Free with Commercial Standard)

Applications

 Microprocessor Reset Circuitry  Memory Battery Back-up Circuits  Power-on Reset Circuits  Power Failure Detection  System Battery Life and Charge Voltage Monitors  Delay Circuitry Typical Application Circuit

Ordering Information

Detection Voltage Code(Exam.) 16=1.6V 17=1.7V 18=1.8V

EC95810 Voltage Detectors with Built-in Delay Circuit Marking Information 1. SOT23-3L 2. SC70-3L & SC82-4L

1 Represents Products Series(See Note1)

2 Represents decimal number of detect voltage(See Note 2)

3 Represents week Code of Production Date Code

The big character of A~Z is for the week of 1~26, and small a~z is for the week of 27~52.

4 Represents Pin Type of Product

N is Normal; I is for SC82-4L Pin Type I; S is for SC82-4L Pin Type S Note：Starting with underlined second digit, a bar is for production year 2012. The next bar is mark on top of 3rd digit is for year 2013. The next bar is mark on bottom of 3rd is for year 2014.The next bar is mark on top of 4th digit is year for 2015. The naming pattern continues with consecutive characters for later years. Package Part Number Marking Marking Information SOT23-3L EC95810NXXB1R 95810 NXXYW XX：Detection Voltage(16=1.6V;17=1.7V 18=1.8V…) Y：Year code(D=2013;E=2014;F=2015…) W：Week Code( The big character of A~Z is for the week of 1~26, and small a~z is for the week of 27~52. SOT23-3L EC95810CXXB1R 95810 CXXYW

EC95810 Voltage Detectors with Built-in Delay Circuit Note 1：Represents Products Series Note 2：Represents decimal number of detect voltage Marking Example： Mark Vout Type Voltage(V) Mark Vout Type Voltage(V) R CMOS 0.X 3 N-ch 0.X T CMOS 1.X 4 N-ch 1.X U CMOS 2.X 5 N-ch 2.X W CMOS 3.X 6 N-ch 3.X 0 CMOS 4.X 7 N-ch 4.X 1 CMOS 5.X 8 N-ch 5.X 2 CMOS 6.X 9 N-ch 6.X Mark Voltage(V) Mark Voltage(V) 0 X.0 5 X.5 1 X.1 6 X.6 2 X.2 7 X.7 3 X.3 8 X.8 4 X.4 9 X.9

EC95810 Voltage Detectors with Built-in Delay Circuit Pin Description

EC95810 Voltage Detectors with Built-in Delay Circuit Absolute Maximum Rating Note： * The power dissipation values are based on the condition that junction temperature TJ and ambient temperature TA difference is 100°C. * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and function operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum -rated conditions for extended periods may affect device reliability.

Electrical Characteristics

(TA=25°C, unless otherwise noted.) Parameter Symbol Ratings Units Input Voltage VIN to GND VIN 6.0 V Output Voltage, CMOS VOUT GND~VIN+0.3V V Output Voltage, N-ch GND~6V Output Current IOUT 50 mA Junction Temperature TJ +155 °C Power Dissipation SOT23-3L PD 310 mW SC82-4L 250 SC70-3L 250 Operating Ambient Temperature TOPR -40 ~ +105 °C Storage Temperature TSTG -55 ~ +150 °C Lead Temperature (soldering, 10sec) +260 °C Symbol Parameter Test Conditions Min Typ Max Unit VIN Operating Voltage 1.0 6.0 V VDET Detection Voltage VDET* 0.98 VDET VDET* 1.02 V VHYS Hysteresis Width VDET* 0.03 VDET* 0.05 VDET* 0.08 V IQ Quiescent Current VIN=5V 1.2 3.5 µA IOUT Output Current N-ch Output VIN=2V 3 7 mA VIN=3V 5 10 VIN=5V 7 13 ILEAK Leakage Current N-ch, VIN=VOUT=5V 0.1 µA TC Temperature Coefficient -40°C<TA< +105°C 100 350 ppm/ TDLY Transient Delay Time 100 200 400 mS

EC95810 Voltage Detectors with Built-in Delay Circuit Function Block Diagram CMOS Output N-ch Open drain Output

EC95810 Voltage Detectors with Built-in Delay Circuit Typical Operating Characteristics (EC95810N22C7IR tested, TA=+25℃, unless otherwise noted.) (1) Output Voltage vs. Input Voltage (2) Supply Current v.s Input Voltage EC95810N22C7IR EC95810N22C7IR (3) Detect Voltage v.s Amibent (4) Supply Current v.s Amibent Temperature Temperature EC95810N22C7IR EC95810N22C7IR

EC95810 Voltage Detectors with Built-in Delay Circuit (5) Start-up Voltage Waveform (6) Shutdown Voltage Waveform

EC95810 Voltage Detectors with Built-in Delay Circuit Detail Description Basic Operation For EC95810C CMOS Active low output: (1) When the input voltage VIN is higher than the release voltage VREL (VREL = VDET + VHYS), the N-ch MOS is OFF and P-ch MOS is ON to provide VIN at the output. Since NMOS is OFF, the comparator input voltage is VIN x (R2+R3) / (R1+R2+R3) When the VIN goes below the VREL, VIN keeps at the output since VIN remains above the detection voltage VDET. The difference between VREL and VDET is the hysteresis range. (2) When the VIN goes below the VDET, the N-ch MOS is ON and P-ch MOS is OFF to provide GND level at the output. At this time NMOS is ON, the comparator input voltage is VIN x R2 / (R1+R2) (3) When the VIN falls below the minimum operating voltage, the output becomes undefined changed to VIN if the output is pulled up to VIN. (4) When the VIN rises above the minimum operating voltage, the GND level appears at the output. The GND level keeps at the output even when VIN goes above the detection voltage VDET, as long as it doesn’t exceed the release voltage VREL. (5) When the VIN rises above the release voltage VREL, the N-ch MOS is OFF and P-ch MOS is ON to provide VIN at the output after the delay time counted by the internal delay circuit.

EC95810 Voltage Detectors with Built-in Delay Circuit Delay Circuit The delay circuit delays the output signal from the time when the power voltage VIN exceeds the release voltage (VREL). The output signal is not delayed when the VIN goes below the detection voltage (VDET). The built-in delay circuit provides benefits of MCU system reliability and low cost by eliminating external components. The output waveform relative to input signal is shown in the figure. Oscillation Notice When a resistor is connected between the input voltage and the input pin VIN with CMOS output configuration, oscillation may occur due to voltage drop at RIN. The voltage drop is VDROP = RIN x IOUT When the VIN input voltage rises above the release voltage, the detector output voltage increases and the load current IOUT will flow at RLOAD. A voltage drop is produced at RIN. The voltage drop will also lead to a fall in the input voltage at VIN pin. When the VIN input voltage falls below the detection voltage, output voltage falls to GND and the output current will cease. Then the voltage drop at RIN will disappear, and the VIN input voltage will rise to commence release operation. Oscillation may occur with this release detection-release repetition. It’s recommended not to use the CMOS configuration when a resistor RIN is connected between VIN input pin and the powersource. Please use N-channel open drain configuration when RIN is required.

EC95810 Voltage Detectors with Built-in Delay Circuit Change of Detection Voltage For EC95810N N-channel open drain output configuration, the detection voltage can be changed with resistance dividers as shown in the next figure. Detection voltage is changed to VDET x (R1+R2) / R2 Hysteresis width is also changed to VHYS x (R1+R2) / R2 Resistor R1 should be 75 kΩ or less to avoid oscillation. The detection voltage can also be changed with diodes as shown in the figure. Detection voltage becomes VF1 + VF2 + VDET

EC95810 Voltage Detectors with Built-in Delay Circuit Mechanical Dimensions OUTLINE DRAWING SOT23-3L

EC95810 Voltage Detectors with Built-in Delay Circuit Mechanical Dimensions OUTLINE DRAWING SC82-4L(Pin Type I)

EC95810 Voltage Detectors with Built-in Delay Circuit Mechanical Dimensions OUTLINE DRAWING SC82-4L(Pin Type S)

EC95810 Voltage Detectors with Built-in Delay Circuit Mechanical Dimensions OUTLINE DRAWING SC70-3L