EC762060U E-CMOS | Alldatasheet

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■ PNP Silicon Epitaxial Planar Transistor for high speed switching, DC-DC converter and strobe applications Order information EC762060U XX X Absolute Maximum Ratings (T a = 25 ℃) (1) Mounted on a ceramic substrate ( 250 mm X 0.8 t) Parameter Symbol Value Unit Collector Base Voltage -V CBO 50 V Collector Emitter Voltage -V CEO 50 V Emitter Base Voltage -V EBO 7 V Collector Current (DC) -I C 2 A Collector Current (Pulse) -I CP 3.5 A Base Current -I B 200 mA Collector Power Dissipation Ptot 0.5 1(1) W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg - 55 to + 150 ℃ EC762060UB6R B6: SOT89-3L R : Tape reel

EC 762060U Silicon Epitaxial Planar Switching Diode Electrical Characteristics (TA=25 )℃℃ ℃℃ Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -V CE = 2 V, -IC = 300 mA at -VCE = 2 V, -IC = 1 A hFE hFE 200 100 500 Collector Base Cutoff Current at -V CB = 50 V -ICBO 100 nA Emitter Base Cutoff Current at -V EB = 7 V -IEBO 100 nA Collector Emitter Breakdown Voltage at -I C = 10 mA -V(BR)CEO V Collector Emitter Saturation Voltage at -I C = 1 A, -IB = 33 mA -VCE(sat) 0.2 V Base Emitter Saturation Voltage at -I C = 1 A, -IB = 33 mA -VBE(sat) 1.1 V Collector Output Capacitance at -V CB = 10 V, f = 1 MHz C ob pF Rise Time at -V CC ≈ 30 V, I B1 = -IB2 = 33 mA, R L=30 Ω tr ns Storage Time at -V CC ≈ 30 V, I B1 = -IB2 = 33 mA, R L=30 Ω tstg 250 ns Fall Time at -V CC ≈ 30 V, I B1 = -IB2 = 33 mA, R L=30 Ω tf ns

EC 762060U Silicon Epitaxial Planar Switching Diode Package Dimensions SOT-89 Dimensions in mm