EC742314 E-CMOS | Alldatasheet

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■ 20V,5.6A,RDS(ON)=26M Ω@VGS=4.5V 20 ■ Improved dt/dv capability 21 ■ Fast switching 22 ■ Green Device Avaliable 23 ■ Suit for 1.8V Gate Driver applications Application ■ Notebook ■ Load switch ■ Hand-held Instruments Absolute Maximum Ratings Tc=25 ℃ unless otherwise noted Thermal Characteristics Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 10 V Drain Current – Continuous (T C =25 ℃) 5.6 A ID Drain Current – Continuous (T C =100 ℃) 3.5 A IDM Drain Current – Pulsed 1 22.4 A Power Dissipation (T C =25 ℃) 1.47 W PD Power Dissipation – Derate above 25 ℃ 0.012 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit R θJA Thermal Resistance Junction to ambient --- 85 ℃/W

EC 742314 20V N -Channel MOSFETs E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 5 6B02N-Rev.F001 Electrical Characteristics TJ=25 ℃, unless otherwise noted Off Characteristics On Characteristics Dynamic and switching Characteristics Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width 300us , duty cycle 2%.≦ ≦ 3. Essentially independent of operating temperature. Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D =250uA 20 --- V △BV DSS /△TJ BV DSS Temperature Coefficient Reference to 25 ℃ , I D =1mA --- 0.02 --- V/ ℃ VDS =16V , V GS =0V , T J=25 ℃ --- --- 1 uA IDSS Drain-Source Leakage Current V DS =16V , V GS =0V , T J=85 ℃ --- --- 10 uA IGSS Gate-Source Leakage Current V GS =± 10V , V DS =0V --- --- ±100 nA VGS =4.5V , I D =4A --- 22 26 VGS =2.5V , I D =3A --- 28 36 R DS(ON) Static Drain-Source On-Resistance VGS =1.8V , I D =2A --- 39 51 m Ω VGS(th) Gate Threshold Voltage 0.4 0.6 1 V △VGS(th) V GS(th) Temperature Coefficient VGS =V DS , I D =250uA --- -2 --- mV/ ℃ gfs Forward tansconductance V DS =10V, I S=3A --- 7 --- S Qg Total Gate Charge 2 , 3 --- 7.7 11 Qgs Gate-Source Charge 2 , 3 --- 0.9 1 Qgd Gate-Drain Charge 2 , 3 VDS =10V , V GS =4.5V ,ID =4A --- 2.4 5 nC Td(on) Turn-On Delay Time 2 , 3 --- 4.1 8 Tr Rise Time 2 , 3 --- 11.6 22 Td(off) Turn-Off Delay Time 2 , 3 --- 23.9 45 Tf Fall Time 2 , 3 VDD =10V ,VGS =4.5V ,RG =25 Ω ID =1A --- 7.6 14 nS Ciss Input Capacitance --- 535 775 Coss Output Capacitance --- 60 85 Crss Reverse Transfer Capacitance V DS =10V , V GS =0V , F=1MHz --- 34 50 pF Symbol parameter conditions Min Typ Max Uuit IS Continuous Source Current --- --- 5.6 A ISM Pulsed Source Current VG =V D =0V , Force Current --- --- 22.4 A VSD Diode Forward Voltage V GS =0V , I S=1A , T J=25 ℃ --- --- 1 V

EC 742314 20V N -Channel MOSFETs E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 5 6B02N-Rev.F001 ID , Continuous Drain Current (A) Normalized On Resistance (m & ) Normalized Gate Threshold Voltage (V) V GS , Gate to Source Voltage (V) Normalized Thermal Response (R θJA ) ID , Continuous Drain Current (A) T C , Case Temperature ( ℃) TJ , Junction Temperature ( ℃) Fig.1 Continuous Drain Current vs. T C Fig.2 Normalized RDSON vs. T J T J , Junction Temperature ( ℃) Qg , Gate Charge ( nC ) Fig.3 Normalized V th vs. T J Fig.4 Gate Charge Waveform Square Wave Pulse Duration (s) VDS , Drain to Source Voltage (V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area

EC 742314 20V N -Channel MOSFETs E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 5 6B02N-Rev.F001 Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

EC 742314 20V N -Channel MOSFETs E-CMOS Corp. (www.ecmos.com.tw) Page 5 of 5 6B02N-Rev.F001 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550 REF 0.061 REF E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500 TYP. 0.060 TYP. e1 3.000 TYP 0.118 TYP L 0.900 1.200 0.035 0.047 SOT89 PACKAGE INFORMATION