EC7408N60 E-CMOS | Alldatasheet

Document overview

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Technical content

Features

◆ 600V, 8A, R DS(ON)(MAX) =1.2 Ω @ V GS = 10V ◆ Low Crss ◆ Fast Switching ◆ 100 ％ Avalanche Tested

Applications

◆ Adapter ◆ LCD Panel Power ◆ Switching Mode Power Supply ◆ E-Bike Charger Absolute Maximum Ratings (Tc = 25 °C unless ot ot ot ot herwise noted) Thermal Characteristics Limit Symbol Parameter TO-220 TO-263 TO-220F Unit VDS Drain-Source Voltage a 600 V VGS Gate-Source Voltage 30 V Drain Current-Continuous, T C =25 к 8 A ID Drain Current-Continuous, T C =100 к 4.8 A IDM Drain Current-Pulsed b 32 A PD Maximum Power Dissipation @ T J =25 к 125 40 W EAS Single Pulsed Avalanche Energy e 31 mJ TJ, T STG Operating and Store Temperature Range 4.8 V/ns

EC7408N60 600V, 8A N-Channel Power MOSFET

Electrical Characteristics

( T J = 25° C unless otherwise noted) ■ Off Characteristics ■ On Characteristics ■ Dynamic Characteristics ■ Switching Characteristics ■ Drain-Source Diode Characteristics Symbol Parameter Test Condition Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250 µA 600 - - V IDSS Zero Gate Voltage Drain Current VDS = 600V, V GS = 0V - - 20 µ A IGSSF Forward Gate Body Leakage Current VDS = 0V, V GS = 30V - - 100 nA IGSSR Reverse Gate Body Leakage Current VDS = 0V, V GS = -30V - - -100 nA Symbol Parameter Test Condition Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage V GS = V DS , I D = 250µA 2.0 3.0 4.0 V R DS(on) Static Drain-Source On-Resistance d VGS = 10V, I D = 4A - 0.96 1.2 Ω gFS Forward Transconductance d V DS = 15V, I D = 4A - 3.8 10 S Symbol Parameter Test Condition Min. Typ. Max. Unit Ciss Input Capacitance - 1280 - pF Coss Output Capacitance - 146 - pF Crss Reverse Transfer Capacitance VDS = 25V,V GS = 0V f = 1.0 MHz - 22 - pF Symbol Parameter Test Condition Min. Typ. Max. Unit td(on) Turn-On Delay Time - 26.6 - ns tr Turn-On Rise Time - 7.1 - ns td(off) Turn-Off Delay Time - 51.7 - ns tf Turn-Off Fall Time VDD = 300V,I D = 8A, VGS = 10V, RG =10 Ω - 10.9 - ns Q g Total Gate Charge - 23.8 - nC Q gs Gate-Source Charge - 6.6 - nC Q gd Gate-Drain Charge VDD =300V,ID =8A VGS = 10V - 7.9 - nC Symbol Parameter Test Condition Min. Typ. Max. Unit IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 8 A ISM Maximum Pulsed Current V GS =0V - - 32 A VSD Drain-Source Diode Forward Voltage VGS = 0V, I S =8A - 0.82 1.5 V