EC73L50N30H E-CMOS | Alldatasheet
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EC73L50N30H N-Channel MOSFET Main Product Characteristics Features and Benefits: ▓ Advanced MOSFET process Technology ▓ Special designed for PWM, load switching and general purpose applications ▓Ultra low on-resistance with low gate charge ▓Fast switching and reverse body recovery ▓150 ℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: VDSS 300V R DS (on) 45m Ω(typ.) ID 60A ① Symbol Parameteer Max. Units ID @ TC = 25° C Continuouus Drain Curreent, VGS @ 10VV ① 60 ID @ TC = 100° C Continuouus Drain Curreent, VGS @ 10VV ① 42.5 IDM Pulsed Drrain Current ② 240 A Power Disssipation ③ 390 W PD @TC = 25° C Linear Deerating Factor 3.12 W/° C VDS Drain-Souurce Voltage 300 V VGS Gate-to-Source Voltagee ± 30 V EAS Single Pulse Avalanchee Energy @ L==60mH 4465 mJ IAS Avalanchee Current @ L=60mHL 12.2 A TJ TSTG Operatingg Junction andd Storage Temmperature Range -55 to +150 ° C EC73L50N30H YYWW
EC73L50N30H N-Channel MOSFET Thermal Resistance Electrical Characteristics (TA=25℃℃ ℃℃unless otherwise specified) Source-Drain Ratings and Characteristics Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 0.32 ć/W Junction-to-ambient (t İ 10s) ④ — 62 ć/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ć/W Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 300 — — V VGS = 0V, ID = 250 µA RDS(on) Static Drain-to-Source on-resistance — 45 65 m Ω VGS =10V,I D = 25A VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS , ID = 250 µA — — 1 IDSS Drain-to-Source leakage current — — 50 µA VDS =300V,V GS = 0V TJ = 125° C — — 100 VGS =30V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -30V Q g Total gate charge — 124 — Q gs Gate-to-Source charge — 28 — Q gd Gate-to-Drain("Miller") charge — 50 — nC ID = 40A, VDS =240V, VGS = 10V td(on) Turn-on delay time — 62 — tr Rise time — 165 — td(off) Turn-Off delay time — 303 — tf Fall time — 144 — nS VGS =10V, VDS =150V, RGEN =25 Ω ID =40A Ciss Input capacitance — 5723 — Coss Output capacitance — 725 — Crss Reverse transfer capacitance — 32 — pF VGS = 0V VDS = 25V ƒ = 800kHz Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 60 ķ A ISM Pulsed Source Current (Body Diode) — — 240 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.66 1.5 V IS=1A, VGS =0V trr Reverse Recovery Time — 333 — nS Q rr Reverse Recovery Charge — 2.5 — µC TJ = 25° C, IF =38.5A, di/dt = 100A/ µs
EC73L50N30H N-Channel MOSFET Test circuits and Waveforms EAS Test Circuit: Gate charge test circuit: Switching Time Test Circuit: Switching Waveform s: Notes: Calculated continuous current based on maximum allowable junction temperature. Repetitive rating; pulse width limited by max. junction temperature. The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C
Figure 5. Maximum Drain Current Vs. Case Figure 6 . Typical Capacitance Vs. Drain-to-Source
EC73L50N30H N-Channel MOSFET Mechanical Data ：： ：： Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO247 30 8 240 5 1200