EC7375N75 E-CMOS | Alldatasheet
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Technical content
75V、80A N-Channel MOSFET Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 80 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 70 IDM Pulsed Drain Current② 320 PD @TC = 25°C Power Dissipation③ 200 W Linear Derating Factor 2.0 W/°C VDS Drain-Source Voltage 75 V VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 375 mJ IAS Avalanche Current @ L=0.3mH 50 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on -resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Features and Benefits: ◆ Advanced MOSFET process technology ◆ Special designed for PWM, load switching and general purpose applications ◆ Ultra low on-resistance with low gate charge ◆ Fast switching and reverse body recovery ◆ 175℃ operating temperature Main Product Characteristics ABSOLUTE MAXIMUM RATINGS VDSS 75V RDS(on) 6.5mΩ(typ.) ID 80A SSF7509
75V、80A N-Channel MOSFET Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 0.75 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 75 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 6.5 8 mΩ VGS=10V,ID = 30A TJ = 125℃ — 12.5 13 VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA TJ = 125℃ — 2.35 — IDSS Drain-to-Source leakage current — — 1 μA VDS = 75V,VGS = 0V TJ = 125℃ — — 50 IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V Qg Total gate charge — 93.6 — nC ID = 30A, VDS=30V, VGS = 10V Qgs Gate-to-Source charge — 20.2 — Qgd Gate-to-Drain("Miller") charge — 33.3 — td(on) Turn-on delay time — 17.3 — ns VGS=10V, VDS=30V, RL=15Ω, RGEN=2.5Ω tr Rise time — 15.2 — td(off) Turn-Off delay time — 52 — tf Fall time — 19 — Ciss Input capacitance — 4373 — pF VGS = 0V VDS = 25V ƒ = 1MHz Coss Output capacitance — 352 — Crss Reverse transfer capacitance — 306 — Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 80 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 320 A VSD Diode Forward Voltage — 0.85 1.3 V IS=30A, VGS=0V trr Reverse Recovery Time — 36 — ns TJ = 25°C, IF =75A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 62 — nC Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Source-Drain Ratings and Characteristics
75V、80A N-Channel MOSFET Test circuits and Waveforms Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. ⑥ The maximum current rating is limited by bond-wires.
75V、80A N-Channel MOSFET Typical electrical and thermal characteristics
75V、80A N-Channel MOSFET Typical electrical and thermal characteristics
75V、80A N-Channel MOSFET Ordering and Marking Information EC7375N75 X X Part Number Package Marking EC7375N75AT TO220 SSF7509 TO220＝A T：Tube
75V、80A N-Channel MOSFET