EC736014D E-CMOS | Alldatasheet
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EC 73 6014 D 60 V 、、 、、60A N -Channel VDSS 60V R DS (on) 12m Ω (typ.) ID 60A
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Features and Benefits: /square6 Advanced MOSFET process technology /square6 Special designed for PWM, load switching and general purpose applications /square6 Ultra low on-resistance with low gate charge /square6 Fast switching and reverse body recovery /square6 175 ℃ operating temperature Main Product Characteristics Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25° C Continuous Drain Current, V GS @ 10V ① 60 ID @ TC = 100° C Continuous Drain Current, V GS @ 10V ① 42 IDM Pulsed Drain Current ڹ 240 A Power Dissipation ں 115 W PD @TC = 25° C Linear Derating Factor 0.74 W/° C VDS Drain-Source Voltage 60 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 235 mJ IAS Avalanche Current @ L=0.3mH 39 A TJ TSTG Operating Junction and Storage Temperature Range - 55 to + 175 ° C
EC 73 6014 D 60 V 、、 、、60A N -Channel Thermal Resistance ELECTRICAL CHARACTERISTICS (T A=25℃℃ ℃℃ unless otherwise noted) Source-Drain Ratings and Characteristics Symbol Characteristics Typ. Max. Units R θJC Junction-to-case ں— 1.31 ԝ/W R θJA Junction-to-ambient ④ — 62 ԝ/W Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 60 — — V V GS = 0V, I D = 250 µA R DS(on) Static Drain-to-Source on-resistance — 12 14 m Ω V GS =10V,I D = 30A 2.0 — 4.0 VGS(th) Gate threshold voltage — 2.0 — V VDS = V GS , I D =250 µA TJ = 125° C — — 2 IDSS Drain-to-Source leakage current — — 10 µA VDS = 60V,V GS = 0V TJ = 150° C — — 100 V GS =20V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -20V Qg Total gate charge — 45 — Qgs Gate-to-Source charge — 4 — Qgd Gate-to-Drain("Miller") charge — 15 — nC ID = 30A, VDS =30V, VGS = 10V td(on) Turn-on delay time — 14.6 — tr Rise time — 14.2 — td(off) Turn-Off delay time — 40 — tf Fall time — 7.3 — ns VGS =10V, V DS =30V, R L=15 Ω, R GEN =2.5 Ω Ciss Input capacitance — 1480 — Coss Output capacitance — 190 — Crss Reverse transfer capacitance — 135 — pF VGS = 0V VDS = 25V ƒ = 1MHz Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 60 A ISM Pulsed Source Current (Body Diode) — — 240 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V I S=30A, V GS =0V trr Reverse Recovery Time — 33 — ns Qrr Reverse Recovery Charge — 61 — nC TJ = 25° C, I F =15A, di/dt = 100A/ µs
EC 73 6014 D 60 V 、、 、、60A N -Channel Test circuits and Waveforms Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175° C. ⑥ The maximum current rating is limited by bond-wires.
EC 73 6014 D 60 V 、、 、、60A N -Channel Typical electrical and thermal characteristics
EC 73 6014 D 60 V 、、 、、60A N -Channel
EC 73 6014 D 60 V 、、 、、60A N -Channel Ordering and Marking Information EC736014D XX X Part Number Package Marking Marking Information EC736014DA4R TO252 TO252＝＝ ＝＝A4
EC 73 6014 D 60 V 、、 、、60A N -Channel Package Outline Dimension