EC733626 E-CMOS | Alldatasheet
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Technical content
EC733626 30V,6.9A,N-Channel MOSFET Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) 6.9 A ID(70℃) 5.5 A IDM 30 A Maximum Power Dissipation PD 2.8 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
Description
The EC733626 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: ◆ VDS = 30V,ID =6.9A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 35mΩ @ VGS=10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Thermal Resistance SSF3626
EC733626 30V,6.9A,N-Channel MOSFET Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.5 3 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=4.9A 41 51 mΩ VGS=10V, ID=5.9A 25 35 mΩ Forward Transconductance gFS VDS=10V,ID=5.9A 5 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz 550 PF Output Capacitance Coss 100 PF Reverse Transfer Capacitance Crss 50 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) VDS=15V,VGS=10V,RGEN=3..2Ω ID=4.7A 5 nS Turn-on Rise Time tr 25 nS Turn-Off Delay Time td(off) 12 nS Turn-Off Fall Time tf 10 nS Total Gate Charge Qg VDS=15V,ID=5.9A,VGS=10V 9 nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge Qgd 1.7 nC Body Diode Reverse Recovery Time Trr IF=4.7A, dI/dt=100A/µs 20 nS Body Diode Reverse Recovery Charge Qrr 12 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=4.7A 1 1.2 V Electrical Characteristics (TA=25℃ unless otherwise noted) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
EC733626 30V,6.9A,N-Channel MOSFET Typical electrical and thermal characteristics Ordering and Marking Information EC733626 XX X Part Number Package Marking EC733626M1R SOP 8L SSF3626 M1＝SOP 8L R：Tape & Reel
EC733626 30V,6.9A,N-Channel MOSFET