EC733615 E-CMOS | Alldatasheet
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Technical content
-30V 、、 、、-10 A P-Channel MOS FET
Description
The EC733615 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: ◆ VDS = -30V,I D =-10A R DS(ON) < 25mΩ @ V GS =-4.5V R DS(ON) < 14mΩ @ V GS =-10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25 кunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID (25 ℃) -8 A ID (70 ℃) -6 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -80 A Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range T J,T STG -55 To 150 ℃ Thermal Resistance Thermal Resistance, Junction-Ambient (Note 2) R θJA 40 к/W Pin Assignment
-30V 、、 、、-10 A P-Channel MOS FET Electrical Characteristics (T A=25кк кк unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS =0V I D =-250 µA -30 V Zero Gate Voltage Drain Current IDSS VDS =-30V,V GS =0V -1 uA Gate-Body Leakage Current IGSS VGS =±25V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS =V GS ,I D =-250 µA -1.7 -2.2 -3 V VGS =-4.5V, I D =-7A 20 25 m Ω Drain-Source On-State Resistance R DS(ON) VGS =-10V, I D =-10A 12 14 m Ω Forward Transconductance gFS VDS =-5V,I D =-10A 18 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss 1200 PF Output Capacitance Coss 240 PF Reverse Transfer Capacitance Crss VDS =-15V,V GS =0V, F=1.0MHz 150 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) 9 nS Turn-on Rise Time tr 8.5 nS Turn-Off Delay Time td(off) 20 nS Turn-Off Fall Time tf VDS =-15V,V GS =-10V, R GEN =3 Ω ID =1A 8 nS Total Gate Charge Qg 18 nC Gate-Source Charge Qgs 5 nC Gate-Drain Charge Qgd VDS =-15V,I D =-10A, VGS =-10V 3.5 nC Body Diode Reverse Recovery Time Trr 24 nS Body Diode Reverse Recovery Charge Qrr IF=-10A, dI/dt=100A/µs 12 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS =0V,I S=-1A -0.74 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in 2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
-30V 、、 、、-10 A P-Channel MOS FET Typical electrical and thermal characteristics
-30V 、、 、、-10 A P-Channel MOS FET
-30V 、、 、、-10 A P-Channel MOS FET Ordering and Marking Information EC733615 XX X M1 ＝＝ ＝＝SOP 8L
-30V 、、 、、-10 A P-Channel MOS FET Part Number Package Marking EC733615M1R SOP 8L 733615 LLLLL YYWW