EC733612 E-CMOS | Alldatasheet
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Technical content
EC733612 30V、11.6A N-Channel MOSFET Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) 11.6 A ID(70℃) 9 A IDM 50 A Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
Description
The EC733612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: ◆ VDS = 30V,ID =11.6A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Thermal Resistance
EC733612 30V、11.6A N-Channel MOSFET Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 V Electrical Characteristics (TA=25℃ unless otherwise noted) Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=10m A 1.5 2 3 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=10A 13 17 mΩ VGS=10V, ID=11.6A 9 12 mΩ Forward Transconductance gFS VDS=5V,ID=11.6A 18 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz 1302 PF Output Capacitance Coss 211 PF Reverse Transfer Capacitance Crss 159 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) VDS=15V,VGS=10V,RGEN=3Ω ID=1A 6.52 nS Turn-on Rise Time tr 4.16 nS Turn-Off Delay Time td(off) 20.08 nS Turn-Off Fall Time tf 5.68 nS Total Gate Charge Qg VDS=15V,ID=11.6A,VGS=10V 24.88 nC Gate-Source Charge Qgs 4.19 nC Gate-Drain Charge Qgd 4.95 nC Body Diode Reverse Recovery Time Trr IF=11.6A, dI/dt=100A/µs 9.41 nS Body Diode Reverse Recovery Charge Qrr 3.2 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A 0.75 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
EC733612 30V、11.6A N-Channel MOSFET Typical electrical and thermal characteristics
EC733612 30V、11.6A N-Channel MOSFET Typical electrical and thermal characteristics
EC733612 30V、11.6A N-Channel MOSFET Ordering and Marking Information EC733612 XX X Part Number Package Marking EC733612M1R SOP 8L SSF3612 M1＝SOP 8L R：Tape & Reel
EC733612 30V、11.6A N-Channel MOSFET