EC732N7002KB E-CMOS | Alldatasheet

Document overview

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Technical content

Features

/square6 Advanced MOSFET process technology /square6 Special designed for PWM, load switching and general purpose applications /square6 Ultra low on-resistance with low gate charge /square6 Fast switching and reverse body recovery /square6 ESD Rating ：1000V HBM /square6 150 ℃ operating temperature Main Product Characteristics VDSS 60V R DS (on) 2Ω(max.) ID 0.3A Absolute Maximum Ratings Thermal Characteristics Symbol Parameter Max. Units ID @ TC = 25° C Continuous Drain Current, V GS @ 10V ① 0.3 A IDM Pulsed Drain Current ② 1.2 A PD @TC = 25° C Power Dissipation ③ 0.63 W VDS Drain-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 V TJ T STG Operating Junction and Storage Temperature Range -55 to +150 ℃ Symbol Symbol Typ. Max. Units R θJA Junction-to-ambient （ t ≦10 S ）④ 200 /W℃

60 V、、 、、0.3 A N -Channel MOS FET

Electrical Characteristics

(T A=25℃℃ ℃℃ unless otherwise noted) Source-Drain Ratings and Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-to-Source breakdown voltage V(BR)DSS VGS = 0V, I D = 250 µA 60 V VGS =10V, I D =0.5A 1.5 2 Static Drain-to-Source on-resistance R DS(on) VGS =5V, I D =0.05A 3.0 Ω Gate threshold voltage V GS(th) V DS = VGS, I D = 250 µA 1 2.5 V Drain-to-Source leakage current IDSS V DS = 60V,V GS = 0V 1 uA VGS =±5V,V DS =0V ±100 nA Gate-to-Source forward leakage IGSS VGS =±20V,V DS =0V ±10 uA Turn-on delay time td(on) 25 Turn-Off delay time td(off) VGS =10V, V DS =30V, ID =0.2A,R GEN =10 Ω 35 ns Input capacitance Ciss 40 Output capacitance Coss 16.6 Reverse transfer capacitance Crss VGS = 0V VDS = 25V ƒ = 1MHz 9.5 pF Parameter Symbol Condition Min Typ Max Unit Continuous Source Current (Body Diode) IS 0.3 A Pulsed Source Current (Body Diode) ISM MOSFET symbol showing the integral reverse p-n junction diode 1.2 A Diode Forward Voltage V SD IS=0.2A, V GS =0V 1.3 V

60 V、、 、、0.3 A N -Channel MOS FET Test circuits and Waveforms

60 V、、 、、0.3 A N -Channel MOS FET Typical electrical and thermal characteristics

60 V、、 、、0.3 A N -Channel MOS FET Ordering and Marking Information EC732N7002KB XX X Part Number Package Marking EC732N7002KBB1R SOT23-3L S72K B1:SOT23-3L

60 V、、 、、0.3 A N -Channel MOS FET