EC732302 E-CMOS | Alldatasheet
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Technical content
20V、2.4A N-Channel MOSFET
Description
The EC732302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Features and Benefits: ◆ VDS = 20V,ID =2.4A RDS(ON) <115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application
- Battery protection
- Load switch
- Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Thermal Resistance Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous@ Current-Pulsed (Note 1) ID (25℃) 2.4 A ID (70℃) 1.7 A IDM 10 A Maximum Power Dissipation PD 0.9 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Resistance, Junction-Ambient (Note 2) RθJA 140 ℃/W
20V、2.4A N-Channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=3.1A 70 115 mΩ VGS=4.5V, ID=3.6A 45 60 mΩ Forward Transconductance gFS VDS=5V,ID=3.6A 8 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=10V,VGS=0V, F=1.0MHz 300 PF Output Capacitance Coss 120 PF Reverse Transfer Capacitance Crss 80 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) VDD=10V, RL = 2.8 Ω VGS=4.5V,RGEN=6Ω, ID=3.6A, 7 15 nS Turn-on Rise Time tr 55 80 nS Turn-Off Delay Time td(off) 16 60 nS Turn-Off Fall Time tf 10 25 nS Total Gate Charge Qg VDS=10V,ID=3.6A,VGS=4.5V 4.0 10 nC Gate-Source Charge Qgs 0.65 nC Gate-Drain Charge Qgd 1.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.94A 0.76 1.2 V Diode Forward Current (Note 2) IS 0.94 A Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.65 0.95 1.2 V
20V、2.4A N-Channel MOSFET Typical electrical and thermal characteristics
20V、2.4A N-Channel MOSFET
20V、2.4A N-Channel MOSFET Ordering and Marking Information EC732302 XX X Device Marking Device Device Package Reel Size Tape width Quantity
2302 EC732302B1R SOT23-3L Ø 180mm 8 mm 3000 units
B1＝SOT23-3L R：Tape & Reel
20V、2.4A N-Channel MOSFET NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.