EC732129H3 E-CMOS | Alldatasheet
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Features
◆ Advanced MOSFET process technology ◆ Special designed for PWM, load switching and general purpose applications ◆ Ultra low on-resistance with low gate charge ◆ Fast switching and reverse body recovery ◆ 150℃ operating temperature Main Product Characteristics ABSOLUTE MAXIMUM RATINGS Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ① -6 A IDM Pulsed Drain Current ② -24 PD @TC = 25°C Power Dissipation ③ 2.0 W Linear Derating Factor 0.016 W/°C VDS Drain-Source Voltage -20 V VGS Gate-to-Source Voltage ±8 V TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 40 ℃/W RθJA Junction-to-ambient (t≤10s) ④ — 78 ℃/W VDSS -20V RDS(on) 21mΩ (typ.) ID -6.0A SSF2129H3
EC732129H3 -20V、-6A P-Channel MOS Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage -20 — — V VGS = 0V, ID = -250μA RDS(on) Static Drain-to-Source on-resistance — 21 30 mΩ VGS=-4.5V,ID = -6A — 33 40 VGS=-2.5V,ID = -5.3A VGS(th) Gate threshold voltage -0.4 — -1.5 V VDS = VGS, ID = -250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = -20V,VGS = 0V TJ = 125℃ — — 50 TJ =125 ℃ IGSS Gate-to-Source forward leakage — — 100 nA VGS = 8V — — -100 VGS = -8V Qg Total gate charge — 24 — nC ID = -6A, VDS=-10V, VGS =-5V Qgs Gate-to-Source charge — 4.2 — VDS = -10V VDS=-10V, VGS =-5V Qgd Gate-to-Drain("Miller") charge — 5.6 — VGS = -5V VDS=-10V, VGS =-5V td(on) Turn-on delay time — 8.1 — ns VGS=-4.5V, VDS=-10V, ID = -1A, RGEN=6Ω tr Rise time — 15.2 — td(off) Turn-Off delay time — 98 — tf Fall time — 35 — Ciss Input capacitance — 2819 — pF VGS = 0V VDS = -10V ƒ = 1MHz Coss Output capacitance — 262 — Crss Reverse transfer capacitance — 196 — Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — -6 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — -24 A VSD Diode Forward Voltage — — -1.0 V IS=-2.9A, VGS=0V ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Source-Drain Ratings and Characteristics
EC732129H3 -20V、-6A P-Channel MOS Test circuits and Waveforms Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max junction temperature. ③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ④These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
EC732129H3 -20V、-6A P-Channel MOS Typical electrical and thermal characteristics
EC732129H3 -20V、-6A P-Channel MOS Ordering and Marking Information EC732129H3 XX X Part Number Package Marking EC732129H3M1R EC732129H3M1T SOP-8L SSF2129H3 M1：SOP 8L R：Tape & Reel T：Tube