EC7320NS60F E-CMOS | Alldatasheet
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Technical content
600V、20A N-Channel MOSFET Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 20 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 13 IDM Pulsed Drain Current② 80 PD @TC = 25°C Power Dissipation③ 34.7 W Linear Derating Factor 0.27 W/°C VDS Drain-Source Voltage 600 V VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy @ L=13.8mH 248 mJ IAR Avalanche Current @ L=13.8mH 6 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C
Description
The EC7320NS60F series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Features and Benefits: ◆ High dv/dt and avalanche capabilities ◆ 100% avalanche tested ◆ Low input capacitance and gate charge ◆ Low gate input resistance Main Product Characteristics ABSOLUTE MAXIMUM RATINGS VDSS 600V RDS(on) 170mΩ(typ.) ID 20A SSF20NS60F
600V、20A N-Channel MOSFET Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 3.6 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 80 ℃/W Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 600 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 170 190 mΩ VGS=10V,ID = 13A TJ = 125℃ — 475 — VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA TJ = 125℃ — 2.40 — IDSS Drain-to-Source leakage current — — 1 μA VDS = 600V,VGS = 0V TJ = 125°C — — 50 IGSS Gate-to-Source forward leakage — — 100 nA VGS =30V Qg Total gate charge — 50.58 — nC ID = 20A, VDS=480V, VGS = 10V Qgs Gate-to-Source charge — 11.71 — Qgd Gate-to-Drain("Miller") charge — 21.63 — td(on) Turn-on delay time — 15.42 — ns VGS=10V, VDS=380V, RL=18Ω, RGEN=3.38Ω ID=18A tr Rise time — 44.80 — td(off) Turn-Off delay time — 30.92 — tf Fall time — 40.36 — Ciss Input capacitance — 1514 — pF VGS = 0V VDS = 25V ƒ = 500KHz Coss Output capacitance — 57.44 — Crss Reverse transfer capacitance — 8.43 — Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 20 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 80 A VSD Diode Forward Voltage — 0.87 1.3 V IS=20A, VGS=0V trr Reverse Recovery Time — 370 — ns TJ = 25°C, IF =20A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 5 — uC Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Source-Drain Ratings and Characteristics
600V、20A N-Channel MOSFET Test circuits and Waveforms Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction -to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
600V、20A N-Channel MOSFET Typical electrical and thermal characteristics
600V、20A N-Channel MOSFET Typical electrical and thermal characteristics Ordering and Marking Information EC7320NS60F X X Part Number Package Marking EC7320NS60FAT TO220F SSF20NS60F TO220F＝A T：Tube
600V、20A N-Channel MOSFET