EC731020J7 E-CMOS | Alldatasheet
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EC 73 10 20J7 100V 、、 、、60 A N -Channel VDSS 100V R DS (on) 16m Ω (typ.) ID 60A
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Features and Benefits: /square6 Advanced MOSFET process technology /square6 Special designed for PWM, load switching and general purpose applications /square6 Ultra low on-resistance with low gate charge /square6 Fast switching and reverse body recovery /square6 175 ԝ operating temperature Main Product Characteristics Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25° C Continuous Drain Current, V GS @ 10V ڸ60 ID @ TC = 100° C Continuous Drain Current, V GS @ 10V ڸ50 IDM Pulsed Drain Current ڹ 240 A Power Dissipation ں 143 W PD @TC = 25° C Linear Derating Factor 2.0 W/° C VDS Drain-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 240 mJ IAS Avalanche Current @ L=0.3mH 39 A TJ T STG Operating Junction and Storage Temperature Range - 55 to + 175 ° C
EC 73 10 20J7 100V 、、 、、60 A N -Channel Thermal Resistance ELECTRICAL CHARACTERISTICS (T A=25℃℃ ℃℃ unless otherwise noted) Source-Drain Ratings and Characteristics Symbol Characteristics Typ. Max. Units R θJC Junction-to-case ں1.05 — ԝ/W R θJA Junction-to-ambient ڻ — 62 ԝ/W Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 100 — — V V GS = 0V, I D = 250 µA R DS(on) Static Drain-to-Source on-resistance — 16 20 m Ω V GS =10V,I D = 30A 2.0 3.0 4.0 VGS(th) Gate threshold voltage — 2.0 — V VDS = V GS , I D =250 µA TJ = 125° C — — 1 IDSS Drain-to-Source leakage current — — 10 µA VDS = 100V,V GS = 0V TJ = 150° C — — 100 V GS =20V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -20V Qg Total gate charge — 90 — Qgs Gate-to-Source charge — 14 — Qgd Gate-to-Drain("Miller") charge — 24 — nC ID = 30A, VDS =30V, VGS = 10V td(on) Turn-on delay time — 18.2 — tr Rise time — 15.6 — td(off) Turn-Off delay time — 70.5 — tf Fall time — 13.8 — ns VGS =10V, V DS =30V, R L=15 Ω, R GEN =2.5 Ω Ciss Input capacitance — 3150 — Coss Output capacitance — 300 — Crss Reverse transfer capacitance — 240 — pF VGS = 0V VDS = 25V ƒ = 1MHz Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 60 A ISM Pulsed Source Current (Body Diode) — — 240 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V I S=30A, V GS =0V trr Reverse Recovery Time — 57 — ns Qrr Reverse Recovery Charge — 107 — nC TJ = 25° C, I F =60A, di/dt = 100A/ µs
EC 73 10 20J7 100V 、、 、、60 A N -Channel Test circuits and Waveforms Notes: ڸCalculated continuous current based on maximum allowable junction temperature. ڹRepetitive rating; pulse width limited by max. junction temperature. ںThe power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ڻThe value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C
EC 73 10 20J7 100V 、、 、、60 A N -Channel Typical electrical and thermal characteristics
EC 73 10 20J7 100V 、、 、、60 A N -Channel
EC 73 10 20J7 100V 、、 、、60 A N -Channel Ordering and Marking Information EC731020J7XX X TQFN 5×6 Package Outline Dimension Part Number Package Marking Marking Information EC731020J7F2R PQFN5×6