EC2621 E-CMOS | Alldatasheet
Document overview
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Technical content
Features
EC2621 Hall-effect s ensor is a temperature stable, stress - resistant, Low Tolerance of Sensitivity micro-power switch. Superior high -temperature performance is made possible through a dynamic offset cancellation that util izes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. EC2621 is special made for low operation voltage, 1.65V, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small -signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, Very low input-offset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation. The package type is in a Halogen Free version has been verified by third party Lab. CMOS Hall IC Technology Strong RF noise protection 1.65 to 3.5V for battery-powered applications Omni polar, output switches with absolute value of North or South pole from magnet Operation down to 1.65V, Micro power consumption High Sensitivity for reed switch replacement
applications
Multi Small Size option Low sensitivity drift in crossing of Temp. range Ultra Low power consumption at 5uA (Avg) High ESD Protection, HMB > ±4KV( min ) Totem-pole output Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set) Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications Water Meter Floating Meter PDVD NB
EC2621 Micropower CMOS Output Hall Effect Switch
Ordering Information
Pin No. Symbol
Description
1 VDD Power Supply Input
2 OUT
Output Pin.
3 GND
Type Part No. Marking Marking Information TSOT23-3L EC2621NNT1GR 2621 LLLL LLLL：Lot No SOT553 EC2621NNBCGR 21YW YW：Date Code QFN2x2-3L EC2621NNQ1GR YW YW：Date Code TO92-3L EC2621NNA6GR 2621 LLLL LLLL：Lot No R：Tape & Reel G：Green package Package code: T1：TSOT23-3L BC：SOT553 Q1：QFN(2×2)-3L A6：TO92-3L
EC2621 Micropower CMOS Output Hall Effect Switch Block Diagram Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. Absolute Maximum Ratings At TA=25℃ Characteristics Values Unit Supply voltage,(VDD) 4.5 V Output Voltage,(VOUT) 4.5 V Reverse Voltage , (VDD) (VOUT) -0.3 V Magnetic flux density Unlimited Gauss Output current,(IOUT) 1 mA Operating temperature range, (TA) -40 to +85 ℃ Storage temperature range, (TS) -65 to +150 ℃ Maximum Junction Temp,(TJ) 150 ℃ Supply voltage,(VDD) 4.5 V Output Voltage,(VOUT) 4.5 V Thermal Resistance(θJA) TSOT23-3L 310 ℃/W SOT553 540 ℃/W QFN2x2-3L 206 ℃/W TO92-3L 543 ℃/W Thermal Resistance(θJC) TSOT23-3L 223 ℃/W SOT553 390 ℃/W QFN2x2-3L 148 ℃/W TO92-3L 410 ℃/W Package Power Dissipation, (PD) TSOT23-3L 400 mW SOT223 230 mW QFN2x2-3L 606 mW TO92-3L 230 mW Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum -rated conditions for extended periods may affect device reliability. Out Awake/Sleep Timing Control VDD Offset Cancellation Amp Control Logic GND
EC2621 Micropower CMOS Output Hall Effect Switch Electrical Specifications DC Operating Parameters：TA=25℃, VDD=1.8V Magnetic Specifications DC Operating Parameters：TA=25℃, VDD=1.8V Output Behavior versus Magnetic Polar DC Operating Parameters：TA = -40 to 85℃, VDD =1.8V to 3.5V Parameters Test Conditions Min Typ Max Units Supply Voltage,(VDD) Operating 1.65 3.5 V Supply Current,(IDD) Awake State 1.4 3 mA Sleep State 3.6 7 μA Average 5 10 μA Output Leakage Current,(Ioff) Output off 1 uA Output High Voltage,(VOH) IOUT=0.5mA(Source) VDD- 0.12 V Output Low Voltage,(VOL) IOUT=0.5mA(Sink) 0.12 V Awake mode time,(TAW) Operating 40 80 uS Sleep mode time,(TSL) Operating 40 80 mS Duty Cycle,(D,C) 0.1 % Electro-Static Discharge HBM 4 KV Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Point BOPS S pole to branded side, B > BOP, Vout On 30 55 Gauss BOPN N pole to branded side, B > BOP, Vout On -55 -30 Gauss Release Point BRPS S pole to branded side, B < BRP, Vout Off 10 20 Gauss BRPN N pole to branded side, B < BRP, Vout Off -20 -10 Gauss Hysteresis BHYS |BOPx - BRPx| 10 Gauss Parameter Test condition OUT(TSOT23-3L) Test condition OUT(SOT553) South pole B<Bop[(-55)~(-10)] Low B<Bop[(-55)~(-10)] Low Null or weak magnetic field B=0 or B < BRP High B=0 or B < BRP High North pole B>Bop(55~10) Low B>Bop(55~10) Low Parameter Test condition OUT(TSOT23-3L) Test condition OUT(SOT553) South pole B<Bop[(-55)~(-10)] Low B<Bop[(-55)~(-10)] Low
EC2621 Micropower CMOS Output Hall Effect Switch Typical Application circuit
EC2621 Micropower CMOS Output Hall Effect Switch Sensor Location and package dimension
EC2621 Micropower CMOS Output Hall Effect Switch