EC1089_15 TRIQUINT | Alldatasheet

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Technical content

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 5 August 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features

  • 10 – 2500 MHz
  • +24 dBm P1dB
  • +41 dBm OIP3
  • 15.5 dB Gain at 900 MHz
  • 12.2 dB Gain at 1900 MHz
  • Lead-free/Green/RoHS compliant SOT-89 Package

Applications

  • Mobile Infrastructure
  • Final stage amplifiers for Repeaters
  • Defense / Homeland Security Product Description The EC1089 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +41 dBm OIP3 and +24 dBm of compressed 1dB power. It is housed in an industry standard lead-free/green/RoHS- compliant SOT-89 package. All devices are 100% RF and DC tested. The EC1089 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the EC1089 to maintain high linearity over temperature and operate directly off a single +5 V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Functional Diagram RF IN GND RF OUT GND 1 2 3 Function Pin No. Input 1 Output/Bias 3 Ground 2, 4 Specifications (1) Parameters Units Min Typ Max Operational Bandwidth MHz 10 2500 Test Frequency MHz 1900 Gain dB 10.5 12.2 Input Return Loss dB 15 Output Return Loss dB 10 Output P1dB dBm +23.5 Output IP3 (2) dBm +40 +41 IS-95A Channel Power @ -45 dBc ACPR dBm +17 Noise Figure dB 5.9 Test Frequency MHz 2140 Gain dB 11.5 Output P1dB dBm +23.5 Output IP3 (2) dBm +40 Operating Current Range mA 140 160 175 Device Voltage V +5 1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, 800 MHz in a tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Storage Temperature -65 to +150 °C RF Input Power (continuous) +18 dBm Device Voltage +6 V Device Current 220 mA Junction Temperature +220 Thermal Resistance 149 °C / W Operation of this device above any of these parameters may cause permanent damage. Typical Performance (3) Parameters Units Typical Frequency MHz 900 1900 2140 S21 - Gain dB 15.5 12.2 11.5 S11 - Input R.L. dB -14 -15 -15 S22 - Output R.L. dB -10 -10 -10 Output P1dB dBm +24 +23.5 +23.5 Output IP3 dBm +40 +41 +40 Noise Figure dB 5.1 5.9 5.4 Supply Bias +5 V @ 160 mA 3. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +5 V, I = 160 mA, +25 °C

Ordering Information

Part No. Description EC1089B-G ¼ Watt, InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Pkg) Standard T/R size = 1000 pieces on a 7” reel. Not Recommended For New Designs Recommended replacement parts: TQP7M9101

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 5 June 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, I cc = 160 mA, T = 25 °C, unmatched 50 ohm system) 0 1000 2000 3000 Frequency (MHz) Gain / Maximum Stable Gain Gain (dB) DB(|S(2,1)|) DB(GMax()) 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Swp Max 3000MHz Swp Min 50MHz 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Swp Max 3000MHz Swp Min 50MHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, I DS = 160 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download off of the website at: http://www.triquint.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper Microstrip line details: width = .026”, spacing = .026”

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 5 June 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier

900 MHz Application Circuit (EC1089B-PCB900)

S21 – Gain 15.5 dB S11 – Input Return Loss -15 dB S22 – Output Return Loss -10 dB Output IP3 (+11 dBm / tone, 1 MHz spacing) +40 dBm Output P1dB +24 dBm Noise Figure 5.1 dB Supply Voltage +5 V Supply Current 160 mA Measured parameters were taken at 25 °C. CAP ID=C4 C=56 pF CAP ID=C5 C=56 pF CAP ID=C9 C=1 pF DIODE1 ID=D1 CAP ID=C3 C=1000 pF CAP ID=C2 C=56 pF CAP ID=C1 C=100000 pF IND ID=L1 L=33 nH RES ID=L2 R=0 Ohm CAP ID=C7 C=5.6 pF RES ID=L3 R=0 Ohm RES ID=R1 R=2.7K Ohm SUBCKT ID=U1 NET="EC1089" PORT P=1 Z=50 Ohm PORT P=2 Z=50 Ohm Vcc = +5 V 5.6 V C7 should be placed at the silk screen marker 'F' on the WJ evaluation board. All passive components are of size 0603 unless otherwise noted. C9 should be placed between on the WJ evaluation board. size 1206 size 0805 The capacitor should be placed 19° @ 0.9GHz from pin 3 The capacitor should be placed 13.7° @ 0.9GHz from pin 1 of the EC1089 silk screen markers '8' and '9' size 0603 The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. of the EC1089. L2, L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. O IP3 vs. F requ en cy 6 00 700 800 90 0 1000 110 0 Frequency (.9 G H z M atch in g) OIP3 (dBm) A vera ge C D M A A C PR 10 12 14 16 18 A verag e o utp ut p ow er (dB m ) ACPR (dBc) N ote: (IS 95) A C P R 1 m easured a t 750K H z, Forw ard 9 C hannel

1900 MHz Application Circuit (EC1089B-PCB1900)

S21 – Gain 12.2 dB S11 – Input Return Loss -15 dB S22 – Output Return Loss -10 dB Output IP3 (+11 dBm / tone, 1 MHz spacing) +41 dBm Output P1dB +23.5 dBm Noise Figure 5.9 dB Supply Voltage +5 V Supply Current 160 mA Measured parameters were taken at 25 °C. C AP ID =C 4 C =56 pF C AP I D =C 5 C =56 pF I N D I D =L1 L=18 nH R E S ID =R 1 R =2.7 kO hm C AP ID =C 7 C =2.4 pF C AP I D =C 9 C =1.2 pF D I O D E 1 I D =D 1 C AP ID =C 1 C =56 pF C AP ID =C 2 C =1000 pF C AP ID =C 3 C =1e5 pF R E S ID =L2 R =0 kO hm AM P E C 1089 R E S ID =L3 R =0 kO hm Vcc = +5 V 5.6 V m arker "A" on the W J evaluation board. C 7 should be placed at the silk screen All passive com ponents are of size 0603 unless otherwise noted. 4.6° @ 1.9G H z from pin 1.of the E C 1089 T he capacitor should be placed 29° @ 1.9G H z from pin 3. T he capacitor should be placed m arker "6" on the W J evaluation board. C 9 should be placed at the silk screen size 1206 size 0805 T he D iode D 1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a D C regulator. L2, L3 - the 0 ohm resistor - can be rem oved (with a thru line) in the final circuit layout. A vera ge C D M A A C P R 4 0 4 5 5 0 5 5 6 0 6 5 7 0 7 5 8 0 8 5 10 12 14 16 1 8 A ve rage o utp ut p ow er (dB m ) ACPR (dBc) N ote: (IS 95) A C P R 1 m easured at 7 50K H z, F orw ard 9 C hannel O IP 3 v s. Te m pera tu re vs. F requ en cy 1600 1700 1800 1900 2000 2100 F requ en cy (M H z) dBm 25°C -40 °C 85 °C

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 5 June 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier

2140 MHz Application Circuit (EC1089B-PCB2140)

S21 – Gain 11.5 dB S11 – Input Return Loss -15 dB S22 – Output Return Loss -10 dB Output IP3 (+10 dBm / tone, 1 MHz spacing) +40 dBm Output P1dB +23.5 dBm Noise Figure 5.4 dB Supply Voltage +5 V Supply Current 160 mA Measured parameters were taken at 25 °C. CAP ID=C4 C=56 pF CAP ID=C5 C=56 pF CAP ID=C9 C=.8 pF DIODE1 ID=D1 CAP ID=C3 C=1000 pF CAP ID=C2 C=56 pF CAP ID=C1 C=100000 pF IND ID=L1 L=18 nH RES ID=L3 R=0 Ohm CAP ID=C6 C=1.5 pF CAP ID=L2 C=1.5 pF RES ID=R1 R=2.7K Ohm SUBCKT ID=U1 NET="EC1089" PORT P=1 Z=50 Ohm PORT P=2 Z=50 Ohm Vcc = +5 V 5.6 V C6 should be placed at the silk screen marker 'F' on the WJ evaluation board. All passive components are of size 0603 unless otherwise noted. C9 should be placed at on the WJ evaluation board. size 1206 size 0805 The capacitor should be placed 39° @ 2.14GHz from pin 3 The capacitor should be placed 32.6° @ 2.14GHz from pin 1 of the EC1089 silk screen marker '6' The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. of the EC1089. L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. configuration. Component R1 is shown in the silkscreen but is not used for this

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 5 of 5 June 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier EC1089B-G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Land Pattern Product Marking The component will be marked with an “1089G” designator with a lot code marked below the part designator on the top surface of the package. The “Y” represents the last digit of the year the part was manufactured, the “XXX” is an auto-generated number and “Z” refers to a wafer number. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Class 1A Value: Passes between 250 and 500V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. 1089G