DTP75N80 DOINGTER | Alldatasheet
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Technical content
Channel MOSFET uses advanced SGT technology and www.doingter.cn — 1 — Description: This N- design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=80V,ID=70A,RDS(ON)<8mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current- 70 A Pulsed Drain Current 210 EAS Single Pulse Avalanche Energy5 mJ PD Power Dissipation 125 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 Thermal Characteristics: Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 D S G DTP75N80 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics:(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 80 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=80V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=12A --- 6.6 8 mΩ --- Dynamic Characteristics Ciss Input Capacitance VDS=40V, VGS=0V, f=1MHz --- --- pF Coss Output Capacitance --- --- Crss Reverse Transfer Capacitance --- --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, RGEN=2Ω.VGS=10V --- --- ns tr Rise Time --- --- ns td(off) Turn-Off Delay Time --- --- ns tf Fall Time --- --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=25A --- --- nC Qgs Gate-Source Charge --- --- nC Qgd Gate-Drain “Miller” Charge --- --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=12A --- --- 1.3 V Ls Diode Forward Current --- --- --- 70 A --- VGS=4.5V,ID=10A 8.5 10 3056.3 963.5 45.9 ID=25A 20.2 20.2 53.5 71.5 43.1 5.9 11.6 DTP75N80 All d ata sheet.com