DTD113ZS3 CYSTEKEC | Alldatasheet

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Technical content

Features

  • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
  • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
  • Only the on/off conditions need to be set for operation, making device design easy.
  • Complements the DTB113ZS3 Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Limits Unit Supply V oltage V CC 50 V Input V oltage V IN -5~+10 V Output Current I O 500 mA Power Dissipation Pd 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C SOT-323 DTD113ZS3 R1=1kΩ , R2=10 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter

CYStech Electronics Corp. Spec. No. : C379S3 Issued Date : 2004.02.26 Revised Date : Page No. : 2/4 DTD113ZS3 CYStek Product Specification Characteristics (Ta=25℃) Parameter Symbol Min. Typ. Max. Unit Test Conditions VI(off) - - 0.3 V V CC=5V , IO=100µA Input V oltage VI(on) 3 - - V V O=0.3V , IO=20mA Output V oltage V O(on) - 0.1 0.3 V I O/II=50mA/2.5mA Input Current I I - - 7.2 mA V I=5V Output Current I O(off) - - 0.5 µA V CC=50V , VI=0V DC Current Gain G I 56 - - - V O=5V , IO=50mA Input Resistance R 1 0.7 1 1.3 kΩ - Resistance Ratio R 2/R1 8 10 12 - - Transition Frequency f T - 200 - MHz V CE=10V , IC=5mA, f=100MHz * * Transition frequency of the device

CYStech Electronics Corp. Spec. No. : C379S3 Issued Date : 2004.02.26 Revised Date : Page No. : 3/4 DTD113ZS3 CYStek Product Specification Characteristic Curves Current Gain vs Output Current 100 1000 0.1 1 10 100 1000 Output Current---IO(mA) Current Gain---GI Vo = 5V Output Voltage vs Output Current 0.01 0.1 1 10 100 1000 Output Current---Io(mA) Output Voltage---VO(ON)(V) Io / Ii = 20 Input Voltage vs Output Current(ON characteristics) 0.1 100 0.1 1 10 100 1000 Output Current---Io(mA) Input Voltage---VI(ON)(V) Vo = 0.3V Output Current vs Input Voltage(OFF characteristics) 0.01 0.1 00 . 511 . 52 Input Voltage---VI(OFF)(V) Output Current---Io(mA) Vcc = 5V Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---T A(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C379S3 Issued Date : 2004.02.26 Revised Date : Page No. : 4/4 DTD113ZS3 CYStek Product Specification SOT-323 Dimension *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. He E A Q Lp e bp D W B v A Z detail Z A C θ 01 2 scale mm Style: Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Marking: TE G21