DTC623TN3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
  • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
  • Only the on/off conditions need to be set for operation, making device design easy.
  • Complements the DTA623TN3.
  • Pb-free lead plating & halogen-free package. Equivalent Circuit Outline DTC623TN3 B C E R1=2.2 kΩ B：Base C：Collector E：Emitter SOT-23 C B E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 20 V Collector-Emitter V oltage VCEO 20 V Emitter-Base V oltage VEBO 12 V Collector Current IC 600 mA Power Dissipation Pd 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C

CYStech Electronics Corp. Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 2/6 DTC623TN3 CYStek Product Specification Electrical Characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown V oltage VCBO 20 - - V IC=50μA Collector-Emitter Breakdown V oltage VCEO 20 - - V IC=1mA Emitter-Base Breakdown V oltage VEBO 12 - - V IE=50μA Collector-Base Cutoff Current ICBO - - 0.5 μA VCB=20V Emitter-Base Cutoff Current IEBO - - 0.5 μA VEB=12V Collector-Emitter Saturation V oltage VCE(sat) - 40 150 mV IC=50mA, IB=2.5mA DC Current Gain hFE 820 - 2700 - VCE=5V , IC=50mA Input Resistance R 1.54 2.2 2.86 kΩ - Transition Frequency fT - 150 - MHz VCE=10V , IC=50mA, f=100MHz * Output “ON” Resistance Ron - 0.23 - Ω VI=5V , RL=1kΩ, f=1kHz * Transition frequency of the device

Ordering Information

Device Package Shipping Marking DTC623TN3 SOT-23 (Pb-free lead plating & halogen-free package ) 3000 pcs / Tape & Reel R02

CYStech Electronics Corp. Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 3/6 DTC623TN3 CYStek Product Specification Typical Characteristics Current Gain vs Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=5V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) IC=20IB 125℃ 75°C 25°C Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) IC=100IB 125°C 75℃ 25°C Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) IC=500IB 125℃ 75°C 25°C Saturation Voltage vs Collector Current 0.01 0.1 100 1000 0.1 1 10 100 Input Voltage---VI(V) On Resistance---Ron(Ω) Ta=25°C f=1kHz RL=1kΩ

  • Ron measurement circuit

CYStech Electronics Corp. Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 4/6 DTC623TN3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 5/6 DTC623TN3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 6/6 DTC623TN3 CYStek Product Specification SOT-23 Dimension *:Typical Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. H JKD A L GV C B S 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Marking: Style : Pin 1.Base 2.Emitter 3.Collector DIM Min. Max. Min. Max. H 0.0005 0.0040 0.013 0.10 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.