DTA114EE HTSEMI | Alldatasheet
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Technical content
Digital transistors (PNP) DTA114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA
FEATURES
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin -film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost completely eliminating parasitic effects. 3. Only the on/off conditions need to be set for operation, making device PIN CONNENCTIONS AND MARKING SOT-523 SOT-323 TO-92S SOT-23 SOT-23-3L DTA114EE DTA114EUA DTA114ECA DTA114ECA DTA114EKA DTA114ESA Addreviated symbol: 14 Addreviated symbol: 14 Addreviated symbol: 14 Addreviated symbol: 14 Date:2011/05 www.htsemi.comsemiconductor JinYu design easy.
Absolute maximum ratings(Ta=25℃) Limits (DTA114E□) Parameter Symbol E UA CA KA SA Unit Supply voltage V CC -50 V Input voltage V IN -40~10 V I O -50 Output current I C(MAX) -100 mA Power dissipation Pd 150 200 300 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V I(off) -0.5 V CC =-5V ,I O =-100µA Input voltage V I(on) V V O =-0.3V ,I O =-10 mA Output voltage V O(on) -0.3 V I O I =-10mA/-0.5mA Input current I I -0.88 mA V I =-5V Output current I O(off) -0.5 µA V CC =-50V, V I DC current gain G I 30 V O =-5V ,I O =-5mA Input resistance R 7 10 13 K Ω Resistance ratio R 0.8 1 1.2 Transition frequency f T
250 MHz V
=-10V ,I E =5mA,f=100MHz Typical Characteristics Date:2011/05 www.htsemi.comsemiconductor JinYu DTA114EE/DTA114EUA/DTA114EKA /DTA114ESA/ DTA114ECA