DS3656 NSC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Y Quad automotive peripheral driver Y 600 mA output current capability Y High voltage outputsÐ65V Y Clamp diode provided for inductive loads Y Built in regulator Y Overvoltage failsafe Y TTL/LS/CMOS compatible diode clamped inputs Y High power dissipation package Y Guaranteed to withstand worst case fault conditions Connection Diagram Dual-In-Line Package TL/F/5818–1 Top View Order Number DS3656N See NS Package Number N16A Truth Table Enable In X Out X HH L HL Z LX Z H e High level L e Low level X e Irrelevant Z e High impedance state C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage, V CC (Note 2) 65V Input Voltage 7V Output Voltage 65V Continuous Output Current 1.2A Junction Temperature 150 Thermal Resistance (Junction to Ambient) DS3656N Plugged in a Socket 60 §C/W DS3656N Soldered in a PC Board 35 §C/W DS3656N Soldered in a PC Board with 6 in 2 Cn Foil 20 §C/W Lead Temperature (Soldering, 4 seconds) 260 §C Operating Conditions Min Max Units Supply Voltage, V CC 10.5 17.0 V Temperature b40 105 §C Electrical Characteristics (Notes 2 and 3) Symbol Parameter Conditions Min Max Units VCC Power Supply Voltage 10.5 17 V ICC Power Supply Current 65 mA VIH High Level Input Voltage 2.0 V VIL Low Level Input Voltage 0.8 V IIH High Level Input Current V IN e 2.7V 20 mA IIL Low Level Input Current V IN e 0.4V b360 mA VICL Input Clamp Voltage I IN eb 10 mA b1.5 V VOL Low Level Output Voltage I L e 600 mA, V CC e 10.5V 1.5 V IOH High Level Leakage Current V OH e 65V 1.0 mA VF Output Diode Forward Voltage I F e 800 mA 2.5 V IR Output Diode Reverse Leakage V R e 65V 1.0 mA BVCER VOH1 Switching Capacitive or Resistive Load 65 V LVCEO VOH2 Switching Inductive Clamped Load 30 V Switching Characteristics VCC e 13.2V, T A e 25§C Symbol Parameter Conditions Min Max Units tPLH Propagation Delay Time V CC e 13.2V, R L e 30X,C L e 15 pF 10 msLow to High Level Output tPHL Propagation Delay Time V CC e 13.2V, R L e 30X,C L e 15 pF 10 msHigh to Low Level Output tTLH Transition Time V CC e 13.2V, R L e 30X,C L e 15 pF 500 nsLow to High Level Output tTHL Transition Time V CC e 13.2V, R L e 30X,C L e 15 pF 500 nsHigh to Low Level Output tPLH Enable to Output V CC e 13.2V, R L e 30X,C L e 15 pF 10 ms tPHL Enable to Output V CC e 13.2V, R L e 30X,C L e 15 pF 10 ms Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: Voltage values are with respect to network ground terminal unless otherwise specified. Note 3: Unless otherwise specified min/max limits apply across the b40§Ct o a105§C temperature range.

DS3656 Quad Peripheral Driver Physical Dimensions inches (millimeters) Molded Dual-In-Line Package (N) Order Number DS3656N LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

1111 West Bardin Road Fax: (

a49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309 Arlington, TX 76017 Email: cnjwge @ tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408 Tel: 1(800) 272-9959 Deutsch Tel: ( a49) 0-180-530 85 85 Tsimshatsui, Kowloon Fax: 1(800) 737-7018 English Tel: ( a49) 0-180-532 78 32 Hong Kong Fran3ais Tel: ( a49) 0-180-532 93 58 Tel: (852) 2737-1600 Italiano Tel: ( a49) 0-180-534 16 80 Fax: (852) 2736-9960 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.