DS1651 NSC | Alldatasheet
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Features
n Input sensitivity —±7m V n TRI-STATE outputs for high speed buses n Standard supply voltages —±5V n Pin and function compatible with MC3430 Connection Diagram Truth Table Input Strobe Output DS3651 VID ≥ 7m W TA = 0˚C to +70˚C L H H Open −7 mV ≤ VID ≤ +7 mV TA = 0˚C to +70˚C L H X Open VID ≤ −7 mV TA = 0˚C to +70˚C L H L Open L = Low logic state H = High logic state Open = TRI-STATE X = Indeterminate state TRI-STATE® is a registered trademark of National Semiconductor Corporation. Dual-in-Line Package DS007528-1 Top View Order Number DS1651J, DS3651J or DS3651N See NS Package Number J16A or N16A June 1999 DS1651/DS3651 Quad High Speed MOS Sense Amplifiers © 1999 National Semiconductor Corporation DS007528 www.national.com
A Typical MOS Memory Sensing Application for a 4k work by 4-bit Memory Arrangement Employing 1103 Type Memory Devices DS007528-2 Note:Only 4 devices are required for a 4k word by 16-bit memory system. www.national.com 2
Absolute Maximum Ratings(Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltages V CC VEE +7 VDC −7 VDC Differential-Mode Input Signal Voltage Range, VIDR ±6V DC Common-Mode Input Voltage Range, VICR ±5V DC Strobe Input Voltage, VI(S) 5.5 VDC Strobe Temperature Range −65˚C to +150˚C Maximum Power Dissipation (Note 1) at 25˚C Cavity Package Molded Package 1509 mW 1476 mW Lead Temp. (Soldering, 10 seconds) 300˚C Operating Conditions Min Max Unit Supply Voltage (VCC ) DS1651 DS3651 4.5 4.75 5.5 5.25 V V Supply Voltage (V EE ) DS1651 DS3651 −4.5 −4.75 −5.5 −5.25 V V Operating Temperature (T DS1651 DS3651 −55 +125 +70 Output Load Current, (I OL )1 6 m A Differential Mode Input Voltage Range, (VIDR) −5.0 +5.0 V Common-Mode Input Voltage Range, (VICR) −3.0 +3.0 V Input Voltage Range (Any Input to GND), (VIR) −5.0 +3.0 V
Electrical Characteristics
VCC = 5V DC ,V EE = −5 VDC , Min≤ TA ≤ Max, unless otherwise noted (Notes 3, 4) Symbol Parameter Conditions Min Typ Max Unit VIS Input Sensitivity (Note 6) (Common-Mode Voltage Range) V ICR = −3V ≤ VIN ≤ +3V Min ≤ VCC ≤ Max Min ≥ VEE ≥ Max ±7.0 mV VIO Input Offset Voltage 2m V IIB Input Bias Current V CC = Max, VEE = Max 20 µA IIO Input Offset Current 0.5 µA VIL(S) Strobe Input Voltage (Low State) 0.8 V VIH(S) Strobe Input Voltage (High State) 2V IIL(S) Strobe Current (Low State) VCC = Max, VEE = Max, VIN = 0.4V −1.6 mA IIL(S) Strobe Current (High State) VCC = Max, VEE = Max VIN = 2.4V DS3651 40 µA VIN =V CC 1m A VIN = 2.4V DS1651 100 µA VIN =V CC 1m A VOH Output Voltage (High States) VCC = Min, VEE = Min IO = −400 µA DS1651/DS3651 2.4 V VOL Output Voltage (Low State) VCC = Min, VEE = Min IO = 16 mA DS3651 0.45 VDS1651 0.50 IOS Output Current Short Circuit VCC = Max, VEE = Max, (Note 5) DS1651/DS3651 −18 −70 mA IOFF Output Disable Leakage Current VCC = Max, VEE = Max DS3651 40 µA DS1651 100 µA ICC High Logic Level Supply Current VCC = Max, VEE = Max 45 60 mA IEE High Logic Level Supply Current VCC = Max, VEE = Max −17 −30 mA www.national.com3
VCC = 5V DC ,V EE = −5 VDC ,TA = 25˚C unless otherwise noted. Symbol Parameter Conditions Min Typ Max Units tPHL(D) High-to-Low Logic Level Propagation Delay Time (Differential Inputs) 5m V+V IS, (Figure 2) DS1651/ DS3651 23 45 ns tPLH(D) Low-to-High Logic Level Propagation Delay Time (Differential Inputs) 5m V+V IS, (Figure 2) DS1651/ DS3651 22 55 ns tPOH(S) TRI-STATE to High Logic Level Propagation Delay Time (Strobe) (Figure 1) DS1651/ DS3651 16 21 ns tPHO(S) High Logic Level to TRI-STATE Propagation Delay Time (Strobe) (Figure 1) DS1651/ DS3651 71 8 n s tPOL(S) TRI-STATE to Low Logic Level Propagation Delay Time (Strobe) (Figure 1) DS1651/ DS3651 19 27 ns tPLO(S) Low Logic Level to TRI-STATE Propagation Delay Time (Strobe) (Figure 1) DS1651/ DS3651 14 29 ns Note 1:Derate cavity package 10.1 mW/˚C above 25˚C; derate molded package 11.8 mW/˚C above 25˚C. Note 2:“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. Except for “Operating Temperature Range” they are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation. Note 3:Unless otherwise specified min/max limits apply across the 0˚C to +70˚C range for the DS3651 and across the −55˚C to +125˚C range for the DS1651. All typical values are for TA = 25˚C, VCC = 5V and VEE = −5V. Note 4:All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown as max or min on absolute value basis. Note 5:Only one output at a time should be shorted. Note 6:A parameter which is of primary concern when designing with sense amplifiers is, what is the minimum differential input voltage required at the sense am- plifier input terminals to guarantee a given output logic state. This parameter is commonly referred to as threshold voltage. It is well known that design considerations of threshold voltage are plagued by input offset currents, bias currents, network source resistances, and voltage gain. As a design convenience, theDS1651 and DS3651 are specified to a parameter called input sensitivity (VIS). This parameter takes into consideration input offset currents and bias currents, and guarantees a minimum input differential voltage to cause a given output logic state with respect to a maximum source impedance of 200Ω at each input. Switching Time Waveform Delay V1 V2 S1 S2 C L tPLO(S)) 100 mV GND Closed Closed 15 pF tPOL(S) 100 mV GND Closed Open 50 pF tPHO(S) GND 100 mV Closed Closed 15 pF tPOH(S) GND 100 mV Open Closed 50 pF C L includes jig and probe capacitance. EIN waveform characteristics: tTLH and tTHL ≤ 10 ns measured 10% to 90% PRR = 1 MHz Duty cycle= 50% DS007528-3 Note:Output of channel B shown under test, other channels are tested similarly. www.national.com 4
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Level Detector with Hysteresis DS007528-11 Transfer Characteristics and Equations for Level Detector with Hysteresis DS007528-12 www.national.com7
Typical Applications(Continued) 4-Bit Parallel A/D Converter DS007528-14 20 = ( A+B )( C+D )( E+F )( H+J )( K+L )( M+N )( P+R )( S ) 22 = ( D+J )( N ) 23 = J Conversion time)50 ns www.national.com 8
Physical Dimensionsinches (millimeters) unless otherwise noted Ceramic Dual-in-Line Package (J) Order Number DS1651J, DS1653J, DS3651J or DS3653J Molded Dual-in-Line Package (N) Order Number DS3651N or DS3653N www.national.com9
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: sea.support@nsc.com National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 www.national.com DS1651/DS3651 Quad High Speed MOS Sense Amplifiers National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.