DS3245

DS3245 NSC | Alldatasheet

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Y Operates from 2 standard supplies: 5 V DC,1 2V DC Y Internal bootstrap circuit eliminates need for external PNP’s Y PNP inputs minimize loading Y High voltage/current outputs Y Input and output clamping diodes Y Control logic optimized for use with MOS memory sys- tems Y Pin and function equivalent to Intel 3245 Logic and Connection Diagrams TL/F/5873–1 Dual-In-Line Package TL/F/5873–2 Top View Order Number DS3245J or DS3245N See NS Package Number J16A or N16A C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Temperature Under Bias b10§Ct o a85§C Storage Temperature b65§Ct o a150§C Supply Voltage, V CC b0.5V to a7V Supply Voltage, V DD b0.5V to a14V All Input Voltages b1.0V to V DD Outputs for Clock Driver b1.0V to V DD a 1V Maximum Power Dissipation * at 25 §C Cavity Package 1509 mW Molded Package 1476 mW *Derate cavity package 10.1 mW/ §C above 25 §C; derate molded package 11.8 mW/ §C above 25 §C. Operating Conditions Min Max Units Supply Voltage, V CC 4.75 5.25 V Supply Voltage, V DD 11.4 12.6 V Operating Temperature 9T A 07 5 §C Electrical Characteristics (Notes 2 and 3) Symbol Parameter Conditions Min Typ Max Units IFD Select Input Load Current V F e 0.45V b0.25 mA IFE Enable Input Load Current V F e 0.45V b1.0 mA IRD Select Input Leakage Current V R e 5V 10 mA IRE Enable Input Leakage Current V R e5V 40 mA VOL Output Low Voltage I OL e 5 mA, V IH e 2V 0.45 V IOL eb 5m A b1.0 V VOH Output High Voltage I OH eb 1 mA, V IL e 0.8V V DD b 0.50 V IOH e 5m A V DD a 1.0 V VIL Input Low Voltage, All Inputs 0.8 V VIH Input High Voltage, All Inputs 2 V VCLAMP Input Clamp Voltage V CC e Min, I IN eb 12 mA b1.0 b1.5 V Power Supply Current Drain Symbol Parameter Conditions Min Typ Max Units ICC Current from V CC VCC e 5.25V, 26 34 mAOutput in High State V DD e 12.6V IDD Current from V DD VCC e 5.25V, 23 30 mAOutput in High State V DD e 12.6V ICC Current from V CC VCC e 5.25V, 29 39 mAOutput in Low State V DD e 12.6V IDD Current from V DD VCC e 5.25V, 13 19 mAOutput in Low State V DD e 12.6V Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: Unless otherwise specified min/max limits apply across the 0 §Ct o a§C range. All typical values are for T A e 25§C and V CC e 5V and V DD e 12V. Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown as max or min on absolute value basis.

Switching Characteristics TA e 0§Ct o a75§C, V CC e 5V g5%, V DD e 12V g5% Symbol Parameter Conditions Min (1) Typ(2,4) Max(3) Units tba Input to Output Delay R SERIES e 0 5 11 ns tDR Delay Plus Rise Time R SERIES e 02 0 3 2 n s tab Input to Output Delay R SERIES e 03 7 n s tDF Delay Plus Fall Time R SERIES e 01 8 3 2 n s tT Output Transition Time R SERIES e 20X 10 17 25 ns tDR Delay Plus Rise Time R SERIES e 20X 27 38 ns tDF Delay Plus Fall Time R SERIES e 20X 25 38 ns Capacitance TA e 25§C(5) Symbol Parameter Conditions Min Typ Max Units CIN Input Capacitance, I 1,I 2,I 3,I 4 58p F CIN Input Capacitance, R ,C ,E 1, E 2 8 12 pF Note 1: CL e 150 pF Note 2: CL e 200 pF These values represent a range of total stray plus clock capacitance for nine 4k RAMs. Note 3: CL e 250 pF ( Note 4: Typical values are measured at 25 §C. Note 5: This parameter is periodically sampled and is not 100% tested. Condition of measurement is f e 1 MHz, V BIAS e 2V, V CC e 0V, and T A e 25§C. AC Test Circuit and Switching Time Waveforms Input pulse amplitudes: 3V Input pulse rise and fall times: 5 ns between 1V and 2V Measurements points: see waveforms TL/F/5873–3 TL/F/5873–4

DS3245 Quad MOS Clock Driver Physical Dimensions inches (millimeters) Ceramic Dual-in-Line Package (J) Order Number DS3245J Molded Dual-in-Line Package (N) Order Number DS3245N LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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