DH075TG DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100 V,ID=15A,RDS(ON)<75 mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 15 A 45 IS Pulsed Drain Current ISP 45 A EAS Single Pulse Avalanche Energy 5.5 mJ PD Power Dissipation 36 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.5 ℃/W D S G C ontinuous diode current1 Pulsed Drain Current DH075TG A ll data sheet.com
www.doingter.cn — 2 — RƟJA Thermal Resistance Junction to mbient 62 ℃/W Package Marking and Ordering Information： Part NO. Marking Package Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100 V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5 A --- mΩ VGS=4.5V,ID=3A --- Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- pF Coss Output Capacitance --- Crss Reverse Transfer Capacitance --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=2 Ω，ID=5A --- ns tr Rise Time --- ns td(off) Turn-Off Delay Time --- ns tf Fall Time --- ns Qg Total Gate Charge VGS=10 V, VDS=50V, ID=5 A --- nC Qgs Gate-Source Charge --- nC Qgd Gate-Drain “Miller” Charge --- nC Drain-Source Diode Characteristics --- --- --- --- --- --- --- --- --- --- DH075TG DH075TG H075T TO-252 50 75 60 90 310 171 16.7 3.2 6.5 1.4 1.4 A ll data sheet.com
www.doingter.cn — —4 DH075TG 50 0 50 100 150 100 105 110 115 120 T , J unction temperature (℃) ID = 250 μA VGS = 0 V BVDSS, Dra in-source breakdown voltage (V) -50 0 50 100 150 25m 50m 75m 100m ID = 5 A VGS = 10 V Tj, Junction Temperature (℃) RD S(ON), On-resistance(Ω) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance 50 0 50 100 150 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ID = 250 μA Tj, J unction Temperature (℃) Vth, Th reshold voltage (V) 0.1 100 Tj = 25 ℃ IS, So urce current (A) VSD, Source-Drain voltage (V) Figure 7, Threshold voltage Figure 8, Forward characteristic of body diode 8 16 24 32 40 48 56 100m 200m 300m 400m 500m 5 V RD S(ON), On-resistance(Ω) V 4.
5 VVGS=
3.5 V ID, Drain current(A) 0 20 40 60 80 100 120 140 18ID, D rain current (A) TC, Case Temperature (℃) Figure 9, Drain source on state resistance Figure 10, Drain current A ll data sheet.com