DF16MR12W1M1HF_B67 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Infineon Technologies AG
- PDF pages: 22
Technical content
Features
- Electrical features - V DSS = 1200 V - I DN = 25 A / IDRM = 50 A - High current density - Low inductive design
- Mechanical features - PressFIT contact technology - Integrated NTC temperature sensor - Rugged mounting due to integrated mounting clamps Potential applications
- Solar applications Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 0.10 www.infineon.com 2022-12-05
DF16MR12W1M1HF_B67 EasyPACK™ module Table of contents Datasheet 2 Revision 0.10 2022-12-05
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 3.0 kV Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI > 200 Relative thermal index (electrical) RTI housing 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 10 nH Module lead resistance, terminals - chip RAA'+CC' TH = 25 °C, per switch 3.2 mΩ Module lead resistance, terminals - chip RCC'+EE' TH = 25 °C, per switch 3.2 mΩ Storage temperature Tstg -40 125 °C Mounting force per clamp F 20 50 N Weight G 24 g Note: The current under continuous operation is limited to 25 A rms per connector pin.
2 MOSFET
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj = 25 °C 1200 V Continuous DC drain current IDDC Tvj = 175 °C, VGS = 18 V TH = 70 °C 25 A Repetitive peak drain current IDRM verified by design, tp limited by Tvjmax 50 A Gate-source voltage, max. transient voltage VGS D < 0.01 -10/23 V (table continues...) DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 3 Revision 0.10 2022-12-05
Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Values Unit Gate-source voltage, max. static voltage VGS -7/20 V Table 4 Recommended values Parameter Symbol Note or test condition Values Unit On-state gate voltage VGS(on) 15...18 V Off-state gate voltage VGS(off) -5...0 V Table 5 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-resistance RDS(on) ID = 25 A VGS = 18 V, Tvj = 25 °C 32.3 mΩ VGS = 18 V, Tvj = 125 °C 52.2 VGS = 18 V, Tvj = 175 °C 69.4 VGS = 15 V, Tvj = 25 °C 38.8 Gate threshold voltage VGS(th) ID = 10 mA, VDS = VGS, Tvj = 25 °C, (tested after 1ms pulse at VGS = +20 V) 3.45 4.3 5.15 V Total gate charge QG VDD = 800 V, VGS = -3/18 V 0.074 µC Internal gate resistor RGint Tvj = 25 °C 8.2 Ω Input capacitance CISS f = 100 kHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 2.2 nF Output capacitance COSS f = 100 kHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 0.105 nF Reverse transfer capacitance Crss f = 100 kHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 0.007 nF COSS stored energy EOSS VDS = 800 V, VGS = -3/18 V, Tvj = 25 °C 43 µJ Drain-source leakage current IDSS VDS = 1200 V, VGS = -3 V Tvj = 25 °C 0.015 120 µA Gate-source leakage current IGSS VDS = 0 V, Tvj = 25 °C VGS = 20 V 400 nA Turn-on delay time (inductive load) td on ID = 25 A, RGon = 5.6 Ω, VDD = 600 V, VGS = -3/18 V Tvj = 25 °C 32 ns Tvj = 125 °C 32 Tvj = 175 °C 32 (table continues...) DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 4 Revision 0.10 2022-12-05
Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rise time (inductive load) tr ID = 25 A, RGon = 5.6 Ω, VDD = 600 V, VGS = -3/18 V Tvj = 25 °C 26 ns Tvj = 125 °C 26 Tvj = 175 °C 26 Turn-off delay time (inductive load) td off ID = 25 A, RGoff = 1.5 Ω, VDD = 600 V, VGS = -3/18 V Tvj = 25 °C 48 ns Tvj = 125 °C 53 Tvj = 175 °C 55 Fall time (inductive load) tf ID = 25 A, RGoff = 1.5 Ω, VDD = 600 V, VGS = -3/18 V Tvj = 25 °C 11 ns Tvj = 125 °C 11 Tvj = 175 °C 11 Turn-on energy loss per pulse Eon ID = 25 A, VDD = 600 V, Lσ = 35 nH, VGS = -3/18 V, RGon = 5.6 Ω, di/dt = 2.3 kA/µs (Tvj = 175 °C) Tvj = 25 °C 0.297 mJ Tvj = 125 °C 0.297 Tvj = 175 °C 0.297 Turn-off energy loss per pulse Eoff ID = 25 A, VDD = 600 V, Lσ = 35 nH, VGS = -3/18 V, RGoff = 1.5 Ω, dv/dt = 43.6 kV/µs (Tvj = 175 °C) Tvj = 25 °C 0.057 mJ Tvj = 125 °C 0.057 Tvj = 175 °C 0.057 Thermal resistance, junction to heat sink RthJH per MOSFET 1.85 K/W Temperature under switching conditions Tvj op -40 175 °C Note: The selection of positive and negative gate-source voltages impacts losses and the long-term behavior of the MOSFET and body diode. The design guidelines described in Application Notes AN 2018-09 and AN2021-13 must be considered to ensure sound operation of the device over the planned lifetime. Tvj,op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed specifications, please refer to AN 2021-13.
3 Body diode
Table 6 Maximum rated values Parameter Symbol Note or test condition Values Unit DC body diode forward current ISD Tvj = 175 °C, VGS = -3 V TH = 70 °C 13 A DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 5 Revision 0.10 2022-12-05
Table 7 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VSD ISD = 25 A, VGS = -3 V Tvj = 25 °C 4.2 5.35 V Tvj = 125 °C 3.9 Tvj = 175 °C 3.8
4 Diode, Boost
Table 8 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Implemented forward current IFN 20 A Continuous DC forward current IF 25 A Repetitive peak forward current IFRM tP = 1 ms 40 A I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 25 °C 193 A²s Tvj = 125 °C 169 Tvj = 150 °C 165 Table 9 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 25 A, VGE = 0 V Tvj = 25 °C 1.55 2.05 V Tvj = 125 °C 1.95 Tvj = 150 °C 2.10 Peak reverse recovery current IRM VCC = 600 V, IF = 25 A, -diF/dt = 2300 A/µs (Tvj = 150 °C) Tvj = 25 °C 21 A Tvj = 125 °C 21 Tvj = 150 °C 21 Recovered charge Qr VCC = 600 V, IF = 25 A, -diF/dt = 2300 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.21 µC Tvj = 125 °C 0.21 Tvj = 150 °C 0.21 Reverse recovery energy Erec VCC = 600 V, IF = 25 A, -diF/dt = 2300 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.03 mJ Tvj = 125 °C 0.03 Tvj = 150 °C 0.03 (table continues...) DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 6 Revision 0.10 2022-12-05
Table 9 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Thermal resistance, junction to heat sink RthJH per diode 1.75 K/W Temperature under switching conditions Tvj op -40 150 °C
5 Bypass-diode A
Table 10 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Maximum RMS forward current per chip IFRMSM TH = 50 °C 50 A Maximum RMS current at rectifier output IRMSM TH = 50 °C 50 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 450 A Tvj = 150 °C 360 I2t - value I2t tP = 10 ms Tvj = 25 °C 1010 A²s Tvj = 150 °C 648 Table 11 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 25 A Tvj = 150 °C 0.90 V Reverse current Ir Tvj = 150 °C, VR = 1200 V 0.1 mA Thermal resistance, junction to heat sink RthJH per diode 1.38 K/W Temperature under switching conditions Tvj, op -40 150 °C
6 Bypass-diode B
Table 12 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V (table continues...) DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 7 Revision 0.10 2022-12-05
Table 12 (continued) Maximum rated values Parameter Symbol Note or test condition Values Unit Maximum RMS forward current per chip IFRMSM TH = 100 °C 25 A Maximum RMS current at rectifier output IRMSM TH = 100 °C 25 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 450 A Tvj = 150 °C 360 I2t - value I2t tP = 10 ms Tvj = 25 °C 1010 A²s Tvj = 150 °C 648 Table 13 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 25 A Tvj = 150 °C 0.90 V Reverse current Ir Tvj = 150 °C, VR = 1200 V 0.1 mA Thermal resistance, junction to heat sink RthJH per diode 1.38 K/W Temperature under switching conditions Tvj, op -40 150 °C
7 Inverse-polarity protection diode A
Table 14 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Maximum RMS forward current per chip IFRMSM TH = 50 °C 50 A Maximum RMS current at rectifier output IRMSM TH = 50 °C 50 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 450 A Tvj = 150 °C 360 I2t - value I2t tP = 10 ms Tvj = 25 °C 1010 A²s Tvj = 150 °C 648 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 8 Revision 0.10 2022-12-05
Table 15 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 50 A Tvj = 150 °C 1.10 V Reverse current Ir Tvj = 150 °C, VR = 1200 V 0.1 mA Thermal resistance, junction to heat sink RthJH per diode 1.38 K/W Temperature under switching conditions Tvj, op -40 150 °C
8 Inverse-polarity protection diode B
Table 16 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Maximum RMS forward current per chip IFRMSM TH = 100 °C 25 A Maximum RMS current at rectifier output IRMSM TH = 100 °C 25 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 450 A Tvj = 150 °C 360 I2t - value I2t tP = 10 ms Tvj = 25 °C 1010 A²s Tvj = 150 °C 648 Table 17 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 25 A Tvj = 150 °C 0.90 V Reverse current Ir Tvj = 150 °C, VR = 1200 V 0.1 mA Thermal resistance, junction to heat sink RthJH per diode 1.38 K/W Temperature under switching conditions Tvj, op -40 150 °C DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 9 Revision 0.10 2022-12-05
9 NTC-Thermistor
Table 18 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Specification according to the valid application note. DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 10 Revision 0.10 2022-12-05
10 Characteristics diagrams
Output characteristic (typical), MOSFET ID = f(VDS) VGS = 18 V Output characteristic (typical), MOSFET ID = f(VDS) VGS = 15 V Drain source on-resistance (typical), MOSFET RDS(on) = f(ID) VGS = 18 V Drain source on-resistance (typical), MOSFET RDS(on) = f(Tvj) ID = 25 A 0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 175 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 11 Revision 0.10 2022-12-05
Output characteristic field (typical), MOSFET ID = f(VDS) Tvj = 175 °C Transfer characteristic (typical), MOSFET ID = f(VGS) VDS = 20 V 4 5 6 7 8 9 10 11 Gate-source threshold voltage (typical), MOSFET VGS(th) = f(Tvj) ID = 10 mA, VGS = VDS Gate charge characteristic (typical), MOSFET VGS = f(QG) ID = 25 A, Tvj = 25 °C -50 -25 0 25 50 75 100 125 150 175 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 12 Revision 0.10 2022-12-05
Capacity characteristic (typical), MOSFET C = f(VDS) f = 100 kHz, Tvj = 25 °C, VGS = 0 V Forward characteristic body diode (typical), MOSFET ISD = f(VSD) Tvj = 25 °C 0.1 1 10 100 1000 0.001 0.01 0.1 Forward voltage of body diode (typical), MOSFET VSD = f(Tvj) ISD = 25 A Switching losses (typical), MOSFET E = f(ID) RGoff = 1.5 Ω, RGon = 5.6 Ω, VDD = 600 V, VGS = -3/18 V 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 25 30 35 40 45 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 13 Revision 0.10 2022-12-05
Switching losses (typical), MOSFET E = f(RG) VDD = 600 V, ID = 25 A, VGS = -3/18 V Switching times (typical), MOSFET t = f(ID) RGoff = 1.5 Ω, RGon = 5.6 Ω, VDD = 600 V, Tvj = 175 °C, VGS = -3/18 V 0 10 20 30 40 50 60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30 35 40 45 50 0.01 0.1 Switching times (typical), MOSFET t = f(RG) VDD = 600 V, ID = 25 A, Tvj = 175 °C, VGS = -3/18 V Current slope (typical), MOSFET di/dt = f(RG) VDD = 600 V, ID = 25 A, VGS = -3/18 V 0 5 10 15 20 25 30 35 40 45 50 55 60 0.01 0.1 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.5 1.0 1.5 2.0 2.5 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 14 Revision 0.10 2022-12-05
Voltage slope (typical), MOSFET dv/dt = f(RG) VDD = 600 V, ID = 25 A, VGS = -3/18 V Reverse bias safe operating area (RBSOA), MOSFET ID = f(VDS) RGoff = 1.5 Ω, Tvj = 175 °C, VGS = -3/18 V 0 4 8 12 16 0 200 400 600 800 1000 1200 1400 Transient thermal impedance , MOSFET Zth = f(t) Forward characteristic (typical), Diode, Boost IF = f(VF) 0.001 0.01 0.1 1 10 0.01 0.1 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 15 Revision 0.10 2022-12-05
Switching losses (typical), Diode, Boost Erec = f(IF) RGon = 5.6 , VCC = 600 V Switching losses (typical), Diode, Boost Erec = f(RG) IF = 25 A, VCC = 600 V 0 5 10 15 20 25 30 35 40 45 50 0.00 0.02 0.04 0.06 0 7 14 21 28 35 42 49 56 0.00 0.02 0.04 0.06 Transient thermal impedance, Diode, Boost Zth = f(t) Forward characteristic (typical), Bypass-diode A IF = f(VF) 0.001 0.01 0.1 1 10 0.01 0.1 0.0 0.5 1.0 1.5 100 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 16 Revision 0.10 2022-12-05
Forward characteristic (typical), Bypass-diode B IF = f(VF) Forward characteristic (typical), Inverse-polarity protection diode A IF = f(VF) 0.0 0.5 1.0 1.5 100 Forward characteristic (typical), Inverse-polarity protection diode B IF = f(VF) Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 25 50 75 100 125 150 175 100 1000 10000 100000 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 17 Revision 0.10 2022-12-05
11 Circuit diagram
J Figure 1 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 18 Revision 0.10 2022-12-05
InfineonG1608DF16MR12W1M1HF_B670001 Figure 2 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 19 Revision 0.10 2022-12-05
13 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 3 DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 20 Revision 0.10 2022-12-05
Revision history
Document version Date of release Description of changes 0.10 2022-12-05 Initial version DF16MR12W1M1HF_B67 EasyPACK™ module Datasheet 21 Revision 0.10 2022-12-05
All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-12-05 Published by Infineon Technologies AG
81726 Munich, Germany
© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABE478-001 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.