DE018NG-Y DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=50A,RDS(ON)<17mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 50 A Continuous Drain Current-TC=100℃ 33 IDM Pulsed Drain Current1 200 EAS Single Pulse Avalanche Energy2 64 mJ PD Power Dissipation,TC=25℃ 89 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Package Marking and Ordering Information： Part NO. Marking Package DE018NG- E018N TO-252 D S G DE018NG-Y Y Y A ll data sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.6 2.5 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=30A --- 12 17 mΩ VGS=4.5V,ID=20A --- 16 25 Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 2900 pF Coss Output Capacitance --- 140 Crss Reverse Transfer Capacitance --- 124 Switching Characteristics td(on) Turn-On Delay Time VDD=25V, ID=30A, VGS=10V,RGEN=1.8Ω --- 7.4 ns tr Rise Time --- 5.1 ns td(off) Turn-Off Delay Time --- 28.2 ns tf Fall Time --- 5.5 ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=30A --- 50 nC Qgs Gate-Source Charge --- 6 nC Qgd Gate-Drain “Miller” Charge --- 15 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=30A --- --- 1.2 V Is Continuous Source Current --- 50 A ISM Pulsed Source Current --- 200 A trr Reverse Recovery Time 28 --- Ns qrr Reverse Recovery Charge 40 --- nc IF= 30A, dI/dt=100A/μs DE018NG-Y A ll data sheet.com
www.doingter.cn — 3 — Typical Characteristics： (TC=25℃ unless otherwise noted) N otes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : T J=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ȋ,I AS=16A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% 7%4 7 7(4 7 *% " *% " 3%4 0/ *% " *4 " 74% 7 2( /$ 7(4 7 7(4 777 7%4 7 $044 $344 $*44 7(4 7(4 7%4 DE018NG-Y A ll data sheet.com
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