DE018NG DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=50A,RDS(ON)<18mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 50 A Continuous Drain Current-TC=100℃ 35.4 Pulsed Drain Current 200 EAS Single Pulse Avalanche Energy5 300 mJ PD Power Dissipation 85 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case2 1.8 ℃/W D S G DE018NG A ll data sheet.com
www.doingter.cn — 2 — Package Marking and Ordering Information： Part NO. Marking Package TO-252 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.6 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 12 18 mΩ GFS Forward Transconductance VDS=5V, ID=20A 18 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=30V,VGS=0V,F=1.0MHz --- 2050 --- pF Coss Output Capacitance --- 158 --- Crss Reverse Transfer Capacitance --- 120 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=30V, RL=6.7Ω， VGS=10V,RG=3Ω --- 7.4 --- ns tr Rise Time --- 5.1 --- ns td(off) Turn-Off Delay Time --- 28.2 --- ns tf Fall Time --- 5.5 --- ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=20A --- 50 --- nC Qgs Gate-Source Charge --- 6 --- nC Qgd Gate-Drain “Miller” Charge --- 15 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=20A --- --- 1.2 V DE018NG DE018NG A ll data sheet.com
www.doingter.cn — 3 — Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω. Typical Characteristics： (TC=25℃ unless otherwise noted) DE018NG A ll data sheet.com
www.doingter.cn — 4 — DE018NG A ll data sheet.com
www.doingter.cn — 5 — DE018NG A ll data sheet.com