DC035NG DOINGTER | Alldatasheet
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www.doingter.cn — 1 — DC035NG Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=19A,RDS(ON)<35mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current-TC=25℃1 19 A Continuous Drain Current-TC=100℃ 12 Pulsed Drain Current1 76 EAS Single Pulse Avalanche Energy3 13 mJ PD Power Dissipation,TC=25℃ 20 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Package Marking and Ordering Information： Part NO. Marking Package DC035NG C035N TO-252 D S G A ll data sheet.com
www.doingter.cn — 2 — DC035NG Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=24V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±12V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 0.9 1.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=9A --- 26 35 mΩ VGS=4.5V,ID=7A --- 35 45 Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 635 --- pF Coss Output Capacitance --- 135 --- Crss Reverse Transfer Capacitance --- 40 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V, ID=.8A, VGS=4.5V,RGEN=3.3Ω --- 7 --- ns tr Rise Time --- 13 --- ns td(off) Turn-Off Delay Time --- 32 --- ns tf Fall Time --- 3.5 --- ns Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=5.8A --- 10.5 --- nC Qgs Gate-Source Charge --- 1.6 --- nC Qgd Gate-Drain “Miller” Charge --- 2.7 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=1A --- 0.8 1 V Ls Continuous Source Current1 --- --- 19 A Notes: ① Pulse test ; Pulse width300s, duty cycle2%. ② Pulse width limited by maximum allowable junction temperature. ③ Limited b y TJma x, starting TJ = 25°C, L = 0.5m H,RG = 25Ω, IAS = 7A, VGS =10V. P art not recommended for use above this value A ll data sheet.com
www.doingter.cn — 3 — DC035NG Typical Characteristics： (TC=25℃ unless otherwise noted) V DS, Drain -Source V oltage (V) Fig1. Typical Output Characteristics Tj – Junction Temperature (°C) Fig2. Power Dissipation V GS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature ISD, Source- Drain Voltage (A) Fig5.T ypical Forward Transconductance Vs. Drain Current V DS, Drain -Source V oltage (V) Fig6. Maximum Safe Operating Area ID, Drain-So urce Current (A) Normalized On Resistance Gfs, Forward Transconductance (S) ID - Drain Current (A) ID, Drain-So urce Current (A) Ptot-Power（W） VGS=10V ID=9A A ll data sheet.com
www.doingter.cn — 4 — DC035NG V SD, Source-Drain V oltage (V) F ig7. Typical Source-Drain Diode Forward Voltage Qg -Total Gate Charge (nC) F ig8. Typical Gate Charge Vs.Gate-Source Voltage Tj - Jun ction Temperature (°C) F ig9. Thre shold Voltage Vs. Temperature V DS , Drain-Source Voltage (V) F ig10. Typical Capacitance Vs.Drain-Source Voltage VGS, Gate-Source Voltage (V) ISD, Reverse Drain Current (A)VGS(TH), Gate -Source V oltage (V) C , Capacitance (pF) Fig1 1. Unclamped Inductive Test Circuit and waveforms Fig12. Switch ing Time Test Circuit and waveforms A ll data sheet.com