DC006NG-B DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=80A,RDS(ON)<6mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 80 A Continuous Drain Current-TC=100℃ 46 Pulsed Drain Current1 280 EAS Single Pulse Avalanche Energy2 56 mJ PD Power Dissipation,TC=25℃ 46 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.72 ℃/W Package Marking and Ordering Information： D S G DC006NG-B A ll data sheet.com

www.doingter.cn — 2 — Part NO. Marking Package DC006NG-B C006N TO-252 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=30V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.5 2.5 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=30A --- 4.8 6 mΩ VGS=4.5V,ID=20A --- 7.5 12 Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 1614 --- pF Coss Output Capacitance --- 245 --- Crss Reverse Transfer Capacitance --- 215 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V, ID=30A, VGS=10V,RGEN=3Ω --- 7.5 --- ns tr Rise Time --- 14.5 --- ns td(off) Turn-Off Delay Time --- 35.2 --- ns tf Fall Time --- 9.6 --- ns Qg Total Gate Charge VGS=10V, VDS=15V, ID=30A --- 33.7 --- nC Qgs Gate-Source Charge --- 8.5 --- nC Qgd Gate-Drain “Miller” Charge --- 7.5 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=30A --- --- 1.2 V Is Continuous Source Current --- --- --- 70 A lsm Pulsed Source Current --- -- 280 Ns DC006NG-B A ll data sheet.com

www.doingter.cn — 3 — Typical Characteristics： (TC=25℃ unless otherwise noted) Notes :1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃,VDD= 15V,VG=10V, RG=25Ω, L=0.5mH, IAS=15A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% 1 2 3 4 5 100 Figure 1: Output Characteristics VDS(V

0 VGS(V

Figure 2: Typical Transfer Characteristics ID (A ) ID (A 0 10 20 30 40 4.0 6.0 12.0 Figu re 3:On-resistance vs. Drain Current RDS (ON) (m ID(A 0 8 16 24 32 40 Figure 5: Gate Charge Characteristics Figur e 4: Body Diode Characteristics IS(A VSD(V 0 6 12 18 24 30 C(pF) VDS(V Figure 6: Capacitance Characteristics Qg(n VGS(V 2100 Cos s Crs s TJ=1 25℃ 25℃ Cis s 10.0 14.0 TJ=25℃ 100 101 102 V 7V VGS=2 .5V 100 103 VGS=0V 8 18 1500 1200 900 600 300 VGS=4.5 V VGS=1 VDS=15 V ID=30 A DC006NG-B A ll data sheet.com

www.doingter.cn — 4 — Fi gure 7: Normalized Breakdown Voltage vs. Junction Temperature 1.0 1.5 2.0 2.5 RDS(o n)(mΩ) Fig ure 8: Normalized on Resistance vs. Junction Temperature Tj ( )℃ VDS (V ID(A) 0.1 1 10 100 0.1 Fi gure 9: Maximum Safe Operating Area 0 25 50 75 100 125 150 175 Fi gure 10: Maximum Continuous Drain Current vs. Case Temperature Tc ( )℃ ID(A) 1.3 Tj ( )℃ VBR (DSS)(V -100 -50 0 50 100 150 200 0.9 1.1 1.2 -100 -50 0 50 100 150 200 100 μs 100μs 1ms DCL imited by RD S(on) TC=2 Si ngle pulse 120 10-6 10-5 10-4 10-3 10-2 10-1 100 101 10-2 Fi gure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case TP(s ZthJ- C(℃/W PDM 10-1 100 101 0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse Notes: 1.Duty factor D=t1/t2 2.Peak T J=PDM*Zth JC+TC 10-3 100 s DC006NG-B A ll data sheet.com