DAP202N3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • Small plastic SMD package
  • High switching speed: max. 4ns
  • Continuous reverse voltage: max. 75V
  • Repetitive peak reverse voltage: max. 85V
  • Repetitive peak forward current: max. 450mA.

Applications

  • High-speed switching in thick and thin-film circuits. SOT-23 DAP202N3 Cathode 1：Cathode 2：Cathode 3：Common Anode Cathode Common Anode

CYStech Electronics Corp. Spec. No. : C303N3P Issued Date : 2003.05.27 Revised Date Page No. : 2/4 DAP202N3 CYStek Product Specification Absolute Maximum Ratings @TA=25℃ Parameters Symbol Min Max Unit Repetitive peak reverse voltage V RRM - 85 V Continuous reverse voltage V R - 75 V Continuous forward current(single diode loaded) - 215 Continuous forward current(double diode loaded) IF - 125 mA Repetitive peak forward current I FRM 450 mA Non-repetitive peak forward current @square wave, Tj=125℃ prior to surge t=1µs t=1ms t=1s IFSM 0.5 A A A Total power dissipation(Note 1) Ptot 250 mW Junction Temperature T j - 150 °C Storage Temperature T stg -65 +150 °C Note 1: Device mounted on an FR-4 PCB. Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Symbol Conditions Min Typ. Max Unit Forward voltage V F IF=1mA IF=10mA IF=50mA IF=150mA - - 715 855 1.25 mV mV V V Reverse current I R VR=25V VR=75V VR=25V ,Tj=150℃ VR=75V ,Tj=150℃ - - nA µA µA µA Diode capacitance Cd V R=0V , f=1MHz - - 2 pF Reverse recovery time trr when switched from IF=10mA to IR=10mA,RL=100Ω, measured at IR=1mA - - 4 ns Forward recovery voltage Vfr when switched from IF=10mA tr=20ns - - 1.75 V Thermal Characteristics Symbol Parameter Conditions Value Unit Rth,j-tp thermal resistance from junction to tie-point 360 ℃/W Rth, j-a thermal resistance from junction to ambient Note 1 500 ℃/W Note 1: Device mounted on an FR-4 PCB.

CYStech Electronics Corp. Spec. No. : C303N3P Issued Date : 2003.05.27 Revised Date Page No. : 3/4 DAP202N3 CYStek Product Specification Characteristic Curves Forward Current vs Ambient Temperature 100 125 150 175 200 225 250 0 50 100 150 200 Ambient Temperature---Ta(℃) Forward Current---IF(mA) single diode loaded double diode loaded Forward Current vs Forward Voltage 100 125 150 175 200 225 250 275 Forward Voltage---VF(V) Forward Current---IF(mA) Non-repetitive peak forward current vs pulse duration 0.1 100 1 10 100 1000 10000 Pulse Duration---tp(μs) Non-repetitive peak forward current---IFSM(A) Diode Capacitance vs Reverse Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 2 4 6 8 10 12 14 16 Reverse Voltage---VR(V) Diode Capacitance---CD(pF)

CYStech Electronics Corp. Spec. No. : C303N3P Issued Date : 2003.05.27 Revised Date Page No. : 4/4 DAP202N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Cathode 2.Cathode 3.Common Anode Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3