2SD798 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD798
DESCRIPTION
- With TO-220 package
- High voltage
- DARLINGTON
APPLICATIONS
- With switching and igniter applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD798 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.5A ;L=40mH 300 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.04A 2.0 V VBEsat Base-emitter saturation voltage I C=4A ;IB=0.04A 2.5 V ICBO Collector cut-off current V CB=600V; IE=0 0.5 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.5 mA hFE-1 DC current gain I C=2A ; VCE=2V 1500 hFE-2 DC current gain I C=4A ; VCE=2V 200 COB Collector output capacitance f=1MHz;V CB=50V 35 pF Switching times ton Turn-on time 1 µs tstg Storage time 8 µs tf Fall time IB1=-IB2=0.04A VCC@100V,RL=25B 5 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD798 PACKAGE OUTLINE Fig.2 Outline dimensions