2SD686 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD686
DESCRIPTION
- With TO-220C package
- Complement to type 2SB676
- DARLINGTON
- High DC current gain
APPLICATIONS
- Switching applications
- Hammer drive,pulse motor drive
- Power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -50~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD686 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA; IB=0 80 V VCEsat Collector-emitter saturation voltage I C=3A; IB=6mA 1.5 V VBEsat Base-emitter saturation voltage I C=3A; IB=6mA 2.0 V ICBO Collector cut-off current V CB=100V; IE=0 20 µA IEBO Emitter cut-off current V EB=5V; IC=0 2.5 mA hFE-1 DC current gain I C=1A ; VCE=2V 2000 hFE-2 DC current gain I C=3A ; VCE=2V 1000 Switching times ton Turn-on time 0.2 µs ts Storage time 1.5 µs tf Fall time IB1=-IB2=6mA VCC=30V;RL=10@ 0.6 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD686 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)