D67DE

D67DE POWEREX | Alldatasheet

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u _ ; D67DE ee Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (412) 926-7272 - ~~ Fast Switching’... ** : 7°. Single Darlington. >. 3s Transistor Module: °°": a : - 500-600-700 Volts. (3° 2 a) - . — ] Desorption. i vaits gie Br Lee omuncouans re - |: Sens Powarex Fast Switching Singlé'°% ¢-..2 Es Seon, ic ae Darlington Transistor. Modules are :.:/.°, <1“. Lene ma oon . designed for. tise in switching .92/" “Sy ya* ii poy T Is applications. The modules are isolated .?3* re Fy a . . consisting of ong Darlington’ Transistor:*. me Steep y with atmonolithic reverse parallel 22 2 ous wo Z| ry connected free-wheel diode. =. ~ ts F swath ee Features: . - 4 a —— . Isolatéd Mounting © ec . — | oc |, : ” CHigh Gain (hee) can ital D67DE - Base 1 and 2 Accessible we ‘CONNECTION OLAGRAM .,_ Fast Switching Single Darlington . . a . Transistor Module Al 7 : aes . plications: . . _. 100 Amperes/500-600-700 Volts CO UPS inverters- < . © DC Motor Control mo ; Be & ¢ Switching Power _ ya 500-600-700 Volt D67DE . Supplies sy BEES Outline Drawing 0 AG Motor Conirol pose en re Ordering Information : pe? lid Dimension Inches Millimeter ~ . ° Example; Select the complete six digit ~. ° —K—ja00tois 457204 module part riumber you desire from ~ . =; 4 : the table - i.¢: 067DE7 is & 700 Vol, >" BAO O10 SHE 0.25 100 Ampéré Fast Switching Single) ~ ic 1.242.030 31.6508 Darlington Module. > = - py) 1.473% 025 29.8406 . 7 pete. E 1.170 29.7 —_— F 1,000 #015 25.4404 . ‘Woe vot 00 faperes _ . H G20£.010 18.70.25 pee é to . J 518 13.2 - : K 3804.00 9640.25 D67DE r. foo L 375 Dia. 9.5 Dia - : - M 335 85 N 310.010 7.90.25 a . oe Pp 275.015 7£04 oa . . : Q 250.015 6.4404 a wot R 245 62 ° = aie io _s 22 Dia. 5.6 Dia, : eet ee abe T 21R 7 53R ane Se Rt U 180 46 uo wen mi ne Vv 170 43 . Bee oe Ww 120 34 as 2) Ep x M5 Metric M5: . : a Loft Fe ot ss ar)

“7384827 POWEREX ING 98 DEP) 7294621 onoaraa og 79s sal Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (412) 925-7272 ee OW ra : 0670E ° Srl pe ard Fast Switching Single Darlington Transistor Module : : . ae . 100 Amperas/500-600-700 Volts : . : cur ooh hg ‘| Maximum Ratings T,=25°C unless otherwise spscified ONE gg EE . ‘Symbol 2 DDE os Uae! Se Uunclion temperature” TWO TO Storage Temperature = Tso = 4010 EO ag Collector-Emitter Sustaining Voltage D670E5_—— Voeosus) 400 se Nols Sag Fe Collector-Emitter Voltage Var =-1.5V D670E5 Voev 500 Te ee Vols ye Collector-Emitter Sustaining Voltage D67DE6 Veeosus) 450 se «= Volts’ a 8k Collector-Emitter Voltage Vac = -1.5V D67DE6 Voev 600.” Nols SE Collector-Emittar Sustaining Voltage D67DE7 Veeoisus) 500 ~ — Nolte Collector-Emitter Voltage Vee =—1.5V D67DE7 Veev 700. Volts Fs Emilter-Base Voltage Veo a Volts oe Continuous Collector Current Ic 100 Amperes’ oe Peak (Repetitive) Collector Current Tow 150 Amperes °F Peak (Non-repetitive) Collector Current los 250 « Amperes eed Diode Forward Current lem 10 ~_____Amperes’ or Continuous Base Current tg io: | “Amperes. “a a Peak (Non-repetitive) Base Current lem 20.0 — Amperes,+ as Power Dissipation Pr ° 312.5 atlas + Max. Mounting Torque (M5) Terminal Screws: = Be. “indo. ee Max. Mounting Torque (MS) Mounting Screws = = : ee in Visolation Vrms : 2500-- = Vous. lat Electrical and Mechanical Characteristics T,=25°C unless otherwise specified otto _ ne Characteristics ‘Symbol. Test Conditions Min, We Max, - Units hee Collector Cutoff Current tev Vee =Voev (rated), Ver =—1.5V = — i TMA eee Collector Cutoff Current Icey Ve =Voev (rated), Vee =—1.5V = = OB mA EE Ty=160°C : : “y Emitter Cutoff Current le Veg =35V = Sa) mA Lo DC Current Gain hee lo=150A, Voc =50V 2 80 = - . Ic=100A, Voe =50V 50 200" * - - : lo=40A, Vor =50V joo 275 = =. Po Collector-Emitter Saturation Voltage Voesan Ic =150A, Ip =10.0A - 19 30° v wk Ip =100A, Is =8.0A - AA. 20 Vv vs Io=40A, Ip=40A - 10 - 18 v ‘ Base-Emitter Saturation Voltage Vae(sany Ic=150A, Ip =10.0A = 275. 88 “V aw Ig #1004, Ip =8.0A = 23° - 30 Vv ees Delay Time* ts Veo =250V = “01. 0S us are Rise Time" ton lo=100A = 045 ~ 10". ys Lue Storage Time te let =5A,—lez=100A = a ee et Fall Time* t tp=50 usec =a 80 Diode Forward Voltage Vew em =100A = AO 825 Ve : fem =100A, Ts =150°C = “476124 3900 Va EE Reverse Recovery Time tee lem =100A, dildt=25A/use0 = 45" 700. pat OR Ror =.250 : ae wo 2 Forward Turn-On Time ton tem = 100A, difdt=100A/yseo. -_ Ek Ga 1 Thermal Resistance, Junction to Casa Ras Transistor Part oe SO lg ‘Thermal Resistance, Junction to Case ir Biode Fart = i= 4 SoM Hee “Resistive Load ; :* SOTOGR neh eof abet 194 ‘, ~ oc RRAP De 0. BERL ISE

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