2SD669A JIANGSU | Alldatasheet
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 / TRANSISTOR (NPN)
FEATURES
Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector- Base Voltage 180 V V CEO Collector-Emitter Voltage 2SD669A 120 160 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 1.5 A P C Collector Dissipation 1 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ TO-126 1. EMITTER 2. COLLECTOR 3. BASE 2SD669A /g122 XXX /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit D669,D669A/g32/g39/g72/g89/g76/g70/g72/g3/g70o/g71/g72/g3 Solid dot = Green molding compound device, if none, the normal device /g59/g59/g59/g32/g38ode/g3
ORDERING INFORMATION
Part Number Package Packing Method Pack Quantity 2SD669 TO-126 Bulk 2SD669A TO-126 2SD669 2SD669-TU TO-126 Tube 2SD669A-TU TO-126 Tube Bulk D669 D669A /g122 XXX www.cj-elec.com 1 D,Aug,2017 200pcs/Bag 60pcs/Tube 60pcs/Tube 200pcs/Bag
Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V (BR)CBO I C =1mA, I E =0 180 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA, I B = 0
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V Emitter-base breakdown voltage V (BR)EBO I E =1mA, I C =0 5 V Collector cut-off current I CBO V CB =160V, I E =0 10 µA Emitter cut-off current I EBO V EB =4V, I C =0 10 µA h FE(1) V CE =5V, I C =150mA 2SD669 2SD669A 320 200 DC current gain h FE(2) V CE =5V, I C =500mA 30 Collector-emitter saturation voltage V CE(sat) I C =500mA, I B =50mA 1 V Base-emitter voltage V BE V CE =5V, I C =150mA 1.5 V Transition frequency f T V CE =5V, I C =150mA 140 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 14 pF CLASSIFICATION OF h FE(1) Rank B C D Range 2SD669 60-120 100-200 160-320 2SD669A 60-120 100-200 www.cj-elec.com 2 D,Aug,2017 /g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 a T =25 /g1071 unless otherwise specified
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 200 400 600 800 1000 1200 1 10 100 1000 100 1000 0.1 1 10 100 100 1000 200 400 600 800 1000 100 1000 10 100 1000 100 0123456 0.00 0.06 0.12 0.18 0.24 0.30 0.36 PC — — Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECT OR POWER DISSIPATION PC (W) β=10 IcVBE sat — — BASE-EMIT TER SATURATION VOLTAGE VBEsa t (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ 500 1500 1500 1500 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMM ON EMITTER VCE= 5V CAPACITANCE CT (pF) COLLECT OR-BASE VOLTAGE V (V) Cob/Cib — — VCB/VEB f=1MHz IE=0/IC=0 Ta=25 ℃ Cob Cib COLLECTOR CURRENT IC (mA) BASE-EMITER VOLT AGE VBE (mV) IC —— V BE T a=25℃ T a=100℃ COMM ON EMITTER VCE=5V 1500 β=10 Ta =10 0 ℃ Ta =25℃ ICVCE sat — — COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURRENT IC (mA) IChFE — — Static Characteristic COMM ON EMITTER Ta=25℃ COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.4mA 0.6mA 0.8mA IB=0.2mA Typical Characteristics www.cj-elec.com 3 D,Aug,2017
A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 e e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 Φ 3.000 3.200 0.118 0.126 Symbol Dimensions In Millimeters Dimensions In Inches 2.290 TYP 0.090 TYP www.cj-elec.com 4 D,Aug,2017