D669A

2SD669TA FOSHAN | Alldatasheet

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R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 1 / 6 SOT-89 塑封封装 NPN半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 与 2SB649TA 互补。 Complementary pair with 2SB649TA. 用于低频功率放大。 Low frequency power amplifier. 内部等效电路 / Equivalent Circuit PIN1：Base PIN 2 ：Collector PIN 3 ：Emitter 印章代码 / M a r k i n g hFE Classifications Symbol B C D hFE Range 60～120 100 ～200 160 ～320 Marking H669B H669C H669D 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 引脚排列 / P i n n i n g

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage V EBO 5.0 V Collector Current-Continuous I C 1.5 A Collector Current-Continuous (Pluse) I CP 3.0 A Collector Power Dissipation P C 500 mW Collector Power Dissipation PC(Tc=25℃) 20 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO I C=1.0mA I E=0 180 V Collector to Emitter Breakdown Voltage VCEO IC=10mA R BE=∞ 160 V Emitter to Base Breakdown Voltage V EBO I E=1.0mA I C=0 5.0 V Collector Cut-Off Current I CBO V CB=160V I E=0 10 μA DC Current Gain hFE(1) V CE=5.0V I C=150mA 60 320 hFE(2) V CE=5.0V I C=500mA 30 Base to Emitter Voltage V BE VCE=5.0V I C=150mA 1.5 V Collector to Emitter Saturation Voltage VCE(sat) IC=500mA I B=50mA 1.0 V Transition Frequency f T V CE=5.0V I C=150mA 140 MHz Collector Output Capacitance C ob VCB=10V I E=0 f=1.0MHz 14 pF 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： H： 为公司代码 669： 为型号代码 B： 为 h FE 分档代码 Note: H: Company Code. 669: Product Type. B： h FE Classifications Symbol **: Lot No. Code, code change with Lot No. H669B

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 6 / 6 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 时间：10±1 sec. Temp.:260±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 卷盘包装 / R E E L Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Reel Inner Box 盒 Outer Box 箱 SOT-89 1,000 7 7,000 8 56,000 7〞×12 180×120×180 385×257×392 使用说明 / N o t i c e s