2SD669 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A
DESCRIPTION
- With TO-126 package
- Complement to type 2SB649/649A
- High breakdown voltage VCEO:120/160V
- High current 1.5A
- Low saturation voltage,excellent h FE linearity
APPLICATIONS
- For low-frequency power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD669 180 VCBO Collector-base voltage 2SD669A Open emitter 180 V 2SD669 120 VCEO Collector-emitter voltage 2SD669A Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1.5 A ICM Collector current-peak 3 A Ta=25 1 PD Total power dissipation TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD669 120 V(BR)CEO Collector-emitter breakdown voltage 2SD669A IC=10mA; RBE=B 160 V 2SD669 180 V(BR)CBO Collector-base breakdown voltage 2SD669A IC=1m A ;IE=0 180 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=0.5A ;IB=50mA 1.0 V VBE Base-emitter on voltage I C=150mA ; VCE=5V 1.5 V ICBO Collector cut-off current V CB=160V; IE=0 10 µA 2SD669 60 320 hFE-1 DC current gain 2SD669A IC=150mA ; VCE=5V 200 hFE-2 DC current gain I C=0.5A ; VCE=5V 30 fT Transition frequency I C=150mA ; VCE=5V 140 MHz COB Collector output capacitance f=1MHz ; V CB=10V 14 pF hFE Classifications hFE-1 B C D 2SB649 60-120 100-200 160-320 2SB649A 60-120 100-200
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A PACKAGE OUTLINE Fig.2 Outline dimensions
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A