630 WXDH | Alldatasheet

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Technical content

ROUMSemiconductorTechnologyCO.,LTD. Rev.1.0 www.roum.cn Page1of11 630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

/B630/D630 F630 Drian-SourceVoltage VDS 200 V Gate-DrainVoltage VGS ±30 V DrainCurrent(continuous) ID（T=25℃） （T=100℃） 9 A 5.7 A DrainCurrent(Pulsed)(Note1) IDM 36 A Single PulseAvalancheEnergy(Note5) EAS 160 mJ AvalancheEnergy Repetitive(Note1) EAR 7.2 mJ AvalancheCurrent(Note1) IAR 9 A PeakDiode Recovery dv/dt(Note6) dv/dt 5.5 V/ns TotalDissipation Ta=25℃ Ptot 2 2 W TC=25℃ Ptot 72 38 W JunctionTemperature Tj 150 ℃ storageTemperature Tstg -55～150 ℃ MaximumTemperatureforsoldering TL 300 ℃

4.2 Thermal Characteristics

/B630/D630 F630 ThermalResistanceJunction toCase-sink RthJC 1.74 3.29 ℃/W ThermalResistanceJunction toAmbient RthJA 62.5 62.5 ℃/W

1 Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHSstandard.

2 Features

  • FastSwitching
  • LowONResistance(Rdson≤0.4Ω)
  • LowGate Charge(Typical Data:22nC)
  • LowReverseTransferCapacitances(Typical:22pF)
  • 100% SinglePulseAvalancheEnergyTest
  • 100% ΔVDS Test

3 Applications

  • Highefficiency switchmodepower supplies.
  • Electroniclampballasts based onhalf bridge.
  • UPS
  • Inverter VDSS=200V RDS(on) （TYP)=0.34Ω ID=9A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B

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4.3 Electrical Characteristics(Tc=25℃,unlessotherwise noted)

Parameter Symbol TestCondition Value UnitsMin Typ Max Off Characteristics Drain-source Breakdown Voltage BVDSS ID=250μA,VGS=0V 200 -- -- V Drain-to-Source Leakage Current IDSS VDS=200V,VGS=0V,TC=25℃ -- -- 10 μA VDS=160V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-Source Forward Leakage IGSSF VGS=+30V -- -- 100 nA Gate-to-Source ReverseLeakage IGSSR VGS=-30V -- -- -100 nA On Characteristics(Note3) Gatethresholdvoltage VGS(th) VDS=VGS,ID=250μA 2 -- 4 V Drain-source on Resist ance RDS(on) VGS=10V,ID=4.5A -- 0.34 0.4 Ω Dynamic Characteristics(Note4) Forward Transfer cond uctance gfs VDS=20V,ID=4.5A -- 5 -- S InputCapacitance Ciss VGS=0V,VDS=25V,f=1.0MHz -- 550 -- pFOutput Capacitance Coss -- 85 -- Reverse Transfer Cap acitance Crss -- 22 -- Switching Characteristics(note4) Turn-on Delay Time td(on) ID=9A, VDD=100V, VGS=10V, RG=10Ω -- 11 -- nS Turn-onRiseTime tr -- 70 -- nS Turn-off Delay Time td(off) -- 60 -- nS Turn-offFallTime tf -- 65 -- nS TotalGate Charge Qg ID=9A,VDD=160V,VGS=10V -- 22 -- nCGate-to-Source Charge Qgs -- 3.6 -- Gate-to-Drain(“Miller”)C harge Qgd -- 10.2 -- Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VFSD VGS=0V,IS=9A -- -- 1.5 V Diode Forward Current (Note 2) IS -- -- 9 A ReverseRecoveryTime trr TJ=25℃,IF=9A, dIF/dt=100A/μS,VGS=0V -- 140 -- nS Reverse Recovery Charge Qrr -- 870 -- nC Notes： 1:Repetitiverating,pulsewidthlimitedbymaximumjunctiontemperature. 2:SurfacemountedonFR4Board,t≤10sec. 3:Pulsewidth≤300μs,dutycycle≤2%. 4:Guaranteedbydesign,notsubjecttoproduction. 5.L=10mH,ID=5.7A,VDD=50V,VGATE=200V,StartTJ=25℃. 6.ISD=9A,di/dt≤100A/μs,VDD≤BVDSS,StartTJ=25℃.

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5 Typical characteristics diagrams

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5 Typical characteristics diagrams(continues)

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6 Typical Test Circuit and Waveform

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6 Typical Test Circuit and Waveform(continues)

7 Product Names Rules

With2Digital,ForExample: 60onbehalfof600V, 06onbehalfof60v SpecialFunctionCode Eonbehalfofbuild-inESD NothingonbehalfofnotESD Packaging Code 220F: F 220: Nothing 251: B 252: D 262: I 263: E RatedCurrentCode With1-2Digital, ForExample: 4onbehalfof4A, 10onbehalfof10A, 08onbehalfof0.8A ChannelPolarityCode NonbehalfofNchannel PonbehalfofPchannel FXXNEXX

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8 Product Specifications and Packaging Models

ProductModel PackageType Mark Name RoHS Package Quantity

630 TO-220C 630 Pb-free Tube 1000/box

F630 TO-220F F630 Pb-free Tube 1000/box B630 TO-251 B630 Pb-free Tube 1000/box D630 TO-252 D630 Pb-free Tape ＆ Reel 2500/box I630 TO-262 I630 Pb-free Tube 1000/box E630 TO-263 E630 Pb-free Tape ＆ Reel 800/box

9 Dimensions

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9 Dimensions(continues)

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10 Attentions

 ROUM SemiconductorTechnology CO.,LTD.reserves theright tochangethe specificationwithout prior notice!Thecustomershould obtainthe latestversionofthe informationbefore makingthe orderandverify thatthe informationiscomplete and up todate.  Itis the responsibility ofthe purchaserforany failure orfailure ofany semiconductorproduct under certain conditions.Itisthe responsibilityofthe purchasertocomply with safetystandards andto take safety measuresin the system designandmachinemanufacturing of Romaproducts in order to avoidpotentialrisk offailure.Injuryorpropertydamage.  Productpromotion isendless,ourcompany willbe dedicated toprovidecustomerswith better products.

11 Appendix

Revision history: Date REV. Description Page 2017.03.14 1.0 Original