2SD5702 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD5702
DESCRIPTION
- With TO-3P(H)IS package
- Built-in damper diode
- High voltage ,high speed
APPLICATIONS
- For color display horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 16 A PC Collector power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(H)IS) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD5702 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.8A 2.0 5.0 V VBEsat Base-emitter saturation voltage I C=4A; IB=0.8A 1.5 V ICBO Collector cut-off current V CB=800V; IE=0 10 µA IEBO Emitter cut-off current V EB=4V; IC=0 40 200 mA hFE-1 DC current gain I C=1A ; VCE=5V 10 30 hFE-2 DC current gain I C=3A ; VCE=5V 5 15 fT Transition frequency I C=1A ; VCE=10V 3 MHz VF Diode forward voltage I F=6A 2.0 V tf Fall time IC=4A ;IB1=0.8A;IB2=-1.6A VCC=200V; RL=50@ 0.4 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD5702 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)