2SD526 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD526
DESCRIPTION
- With TO-220C package
- Complement to type 2SB596
- Good linearity of hFE
APPLICATIONS
- Power amplifier applications
- Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 0.4 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA; IB=0 80 V VCEsat Collector-emitter saturation voltage I C=3 A;IB=0.3 A 1.5 V VBE Base-emitter voltage I C=3A ; VCE=5V 1.5 V ICBO Collector cut-off current V CB=80V ;IE=0 30 µA IEBO Emitter cut-off current V EB=5V; IC=0 100 µA hFE-1 DC current gain I C=0.5A ; VCE=5V 40 240 hFE-2 DC current gain I C=3A ; VCE=5V 15 fT Transition frequency I C=0.5A ; VCE=5V 8 MHz COB Output capacitance I E=0; VCB=10V;f=1MHz 90 pF hFE-1 classifications R O Y 40-80 70-140 120-240
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD526