2SD381 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD381
DESCRIPTION
- With TO-220C package
- Complement to type 2SB536
- Low collector saturation voltage
APPLICATIONS
- Audio frequency power amplifier
- Low speed power switching PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 130 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A IB Base current 0.3 A Ta=25 1.5 PT Total power dissipation TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -50~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD381 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA; IB=0 120 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage I C=1A; IB=0.1A 1.5 V ICBO Collector cut-off current V CB=120V; IE=0 1.0 µA IEBO Emitter cut-off current V EB=3V; IC=0 1.0 µA hFE-1 DC current gain I C=5mA ; VCE=5V 25 hFE-2 DC current gain I C=0.3A ; VCE=5V 40 250 COB Output capacitance I E=0 ; VCB=10V; f=1MHz 25 pF fT Transition frequency I C=0.1A ; VCE=5V 45 MHz hFE-2 Classifications N M L K 40-80 60-120 80-160 120-250
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD381 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)