2SD362 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD362
DESCRIPTION
- With TO-220C package
- Collector-base voltage: VCBO=150V
- Collector current :IC=5A
- Collector dissipation : PC=40 (TC=25)
APPLICATIONS
- For B/W TV horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 70 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A PC Collector dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD362 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage I C=1mA; IE=0 150 V V(BR)CEO Collector-emitter breakdown voltage I C=2mA; RBE=: 70 V V(BR)EBO Emitter-base breakdown voltage I E=1mA; IC=0 8 V VCEsat Collector-emitter saturation voltage I C=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage I C=5A; IB=0.5A 1.5 V ICBO Collector cut-off current V CB=100V; IE=0 20 µA IEBO Emitter cut-off current V EB=5V; IC=0 20 µA hFE DC current gain I C=5A ; VCE=5V 20 140 fT Transition frequency I C=0.5A ; VCE=5V 10 MHz hFE classifications N R O 20-50 40-80 70-140
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD362 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD362