2SD325 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD325
DESCRIPTION
- With TO-220C package
- Complement to type 2SB511
- Low collector saturation voltage
APPLICATIONS
- Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 35 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current -peak 3.0 A Ta=25 1.75 PC Collector dissipation TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -50~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD325 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA; IB=0 35 V VCEsat Collector-emitter saturation voltage I C=1.5A; IB=0.15A 1.0 V VBE Base-emitter on voltage I C=1A ; VCE=5V 1.5 V ICBO Collector cut-off current V CB=20V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=4V; IC=0 1.0 mA hFE-1 DC current gain I C=1A ; VCE=2V 40 320 hFE-2 DC current gain I C=0.1A ; VCE=2V 35 fT Transition frequency I C=0.5A ; VCE=5V 8 MHz hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD325 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)