2SD313 TEL | Alldatasheet
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Technical content
TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN)
FEATURES
P CM: 1.75 W (Tamb=25 ℃) Collector current I CM: 3 A Collector-base voltage V (BR)CBO: 6 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 100 µA Collector cut-off current ICEO VCE=60V, IE=0 1 mA Emitter cut-off current IEBO VEB=4V, IC=0 100 µA hFE(1) VCE=2V, IC=1A 40 320 DC current gain hFE(2) VCE=2V, IC=0.1A 40 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 1 V Base-emitter voltage VBE VCE=2V, IC=1A 1.5 V Transition frequency fT V CE=5V, IC=500mA 8 MHz Collector output capacitance Cob VCB=10V, IE=0,f=1MHz 65 pF CLASSIFICATION OF h FE(1) Rank C D E F Range 40-80 60-120 100-200 160-320 1 2 3 TO-220 1. BASE 2. COLLECTOR 3. EMITTER Transys Electronics LI M ITE D